Micron Technology - MT42L32M32D2AC-25AIT:A

  1. Home
  2. Micron Technology - MT42L32M32D2AC-25AIT:A
MT42L32M32D2AC-25AIT:A by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT42L32M32D2AC-25AIT:A
Description LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.95 V;
Datasheet MT42L32M32D2AC-25AIT:A Datasheet
In Stock2,295
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 32MX32
Maximum Seated Height: 1 mm
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals: 134
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B134
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: VFBGA
Width: 10 mm
No. of Ports: 1
Memory Density: 1073741824 bit
Self Refresh: YES
Memory IC Type: LPDDR2 DRAM
JESD-609 Code: e1
Minimum Operating Temperature: -40 Cel
Memory Width: 32
No. of Functions: 1
Length: 11.5 mm
Maximum Access Time: 5.5 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: SELF REFRESH
Terminal Pitch: .65 mm
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 1.95 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,295 $3.000 $6,885.000

Popular Products

Category Top Products

MT46H32M32LFB5-6IT:B by Micron Technology

MT46H32M32LFB5-6IT:B

Micron Technology

Micron Technology's MT46H32M32LFB5-6IT:B is a DDR1 DRAM with 32MX32 organization, operating at 166 MHz. It features a 90-terminal grid array package suitable for industrial applications. With synchronous operation and self-refresh capability, it offers fast access time of 5 ns and supports sequential burst lengths of 2,4,8,16.
MT47H64M16NF-25E:M by Micron Technology

MT47H64M16NF-25E:M

Micron Technology

Micron Technology's MT47H64M16NF-25E:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V nominal voltage and offers 67108864 words of memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
W631GU6NB12I by Winbond Electronics

W631GU6NB12I

Winbond Electronics

W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
MT41J64M16JT-15EAIT:G by Micron Technology

MT41J64M16JT-15EAIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC2M32B2P-6:G by Micron Technology

MT48LC2M32B2P-6:G

Micron Technology

Micron Technology's MT48LC2M32B2P-6:G is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for commercial applications requiring fast access time of 5.5 ns and common I/O type. The small outline package with 0.5 mm terminal pitch makes it ideal for space-constrained designs.
MT41K512M8DA-107:P by Micron Technology

MT41K512M8DA-107:P

Micron Technology

Micron Technology's MT41K512M8DA-107:P is a DDR3L DRAM with 512MX8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package has 78 terminals in a grid array shape, suitable for applications requiring high memory density and low power consumption.
IS42S32400F-7BLI-TR by Integrated Silicon Solution

IS42S32400F-7BLI-TR

Integrated Silicon Solution

IS42S32400F-7BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. Featuring a max clock frequency of 143 MHz, it suits industrial applications requiring high memory density and fast access times.
IS42VM16200D-6BLI by Integrated Silicon Solution

IS42VM16200D-6BLI

Integrated Silicon Solution

IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.
AS4C64M16D3LB-12BIN by Alliance Memory

AS4C64M16D3LB-12BIN

Alliance Memory

Alliance Memory's AS4C64M16D3LB-12BIN is a 64MX16 DDR3L DRAM with 1.35V supply, operating from -40 to 95 °C. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and thin profile grid array packaging.
AS4C256M32MD4-062BAN by Alliance Memory

AS4C256M32MD4-062BAN

Alliance Memory

Alliance Memory's AS4C256M32MD4-062BAN is a 256MX32 LPDDR4 DRAM with 32-bit memory width and 8589934592-bit density. It operates b/w -40 to 105 °C, featuring multi-bank page burst access mode. Ideal for high-performance applications requiring fast data processing and storage capabilities.
MT61K256M32JE-21:T by Micron Technology

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.
IS42S16800F-7TL by Integrated Silicon Solution

IS42S16800F-7TL

Integrated Silicon Solution

IS42S16800F-7TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT53D1024M32D4DT-053AIT:D by Micron Technology

MT53D1024M32D4DT-053AIT:D

Micron Technology

LPDDR4 DRAM;
S27KL0642DPBHI023 by Infineon Technologies

S27KL0642DPBHI023

Infineon Technologies

Infineon Technologies' S27KL0642DPBHI023 is a 8MX8 CMOS DRAM with synchronous operation and self-refresh capability. It has a max clock frequency of 166 MHz and a memory density of 67108864 bit. This memory IC type, known as HYPERRAM, is commonly used in applications requiring high-speed data storage and retrieval.
MT40A1G16KD-062EIT:ETR by Micron Technology

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.
IS42S16800F-7TLI-TR by Integrated Silicon Solution

IS42S16800F-7TLI-TR

Integrated Silicon Solution

IS42S16800F-7TLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC16M16A2TG-75IT by Micron Technology

MT48LC16M16A2TG-75IT

Micron Technology

MT48LC16M16A2TG-75IT by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
EDB4432BBBJ-1DAAT-F-D by Micron Technology

EDB4432BBBJ-1DAAT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAAT-F-D is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and low power consumption in compact devices.
MT48LC8M16A2P-75IT:GTR by Micron Technology

MT48LC8M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 85°C max temp. It features self-refresh, operates in industrial grade, and has 8388608 words memory capacity. Ideal for applications requiring fast access time and high memory density.
AS4C256M16D3B-12BIN by Alliance Memory

AS4C256M16D3B-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.