MT42L512M32D4LG-3WT:A by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT42L512M32D4LG-3WT:A
Description	LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.8;
Datasheet	MT42L512M32D4LG-3WT:A Datasheet
In Stock	1,939

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	512MX32
Maximum Seated Height:	.8 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
Maximum Supply Current:	7 mA
No. of Terminals:	168
No. of Words:	536870912 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	S-PBGA-B168
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	VFBGA
Width:	12 mm
No. of Ports:	1
Memory Density:	17179869184 bit
Self Refresh:	YES
Memory IC Type:	LPDDR2 DRAM
Memory Width:	32
No. of Functions:	1
Refresh Cycles:	4096
Length:	12 mm
Maximum Access Time:	10 ns
No. of Words Code:	512M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM
Terminal Pitch:	.5 mm
Maximum Supply Voltage (Vsup):	1.95 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,939	-	-

RECTIFIER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;