Micron Technology - MT44K64M18RB-083F

  1. Home
  2. Micron Technology - MT44K64M18RB-083F
MT44K64M18RB-083F by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT44K64M18RB-083F
Description RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; Package Body Material: PLASTIC/EPOXY;
Datasheet MT44K64M18RB-083F Datasheet
In Stock813
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .225 Amp
Organization: 64MX18
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Seated Height: 1.2 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.28 V
Surface Mount: YES
Maximum Supply Current: 1260 mA
No. of Terminals: 168
Maximum Clock Frequency (fCLK): 1204.8 MHz
No. of Words: 67108864 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE
Technology: CMOS
JESD-30 Code: S-PBGA-B168
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 95 Cel
Package Code: TBGA
Width: 13.5 mm
No. of Ports: 1
Memory Density: 1207959552 bit
Self Refresh: NO
Sequential Burst Length: 2,4,8
Memory IC Type: RLDRAM3
Minimum Operating Temperature: 0 Cel
Memory Width: 18
No. of Functions: 1
Package Equivalence Code: BGA168,13X13,40
Interleaved Burst Length: 2,4,8
Length: 13.5 mm
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.35
Additional Features: AUTO REFRESH
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Pitch: 1 mm
Maximum Supply Voltage (Vsup): 1.42 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
813 - -

Popular Products

Category Top Products

EDD5116AGTA-5B-E by Elpida Memory

EDD5116AGTA-5B-E

Elpida Memory

Elpida Memory's EDD5116AGTA-5B-E is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT47H128M16HG-3IT:A by Micron Technology

MT47H128M16HG-3IT:A

Micron Technology

Micron Technology's MT47H128M16HG-3IT:A is a DDR2 DRAM with 128MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC2M32B2P-7:G by Micron Technology

MT48LC2M32B2P-7:G

Micron Technology

Micron Technology's MT48LC2M32B2P-7:G is a 3.3V Synchronous DRAM with 2MX32 organization, offering 2097152 words memory density. It operates at up to 143 MHz clock frequency and has a max access time of 5.5 ns. Ideal for commercial applications requiring high-speed memory performance in compact form factors.
K4S643232H-UC60 by Samsung

K4S643232H-UC60

Samsung

Samsung's K4S643232H-UC60 is a 2MX32 DRAM with 86 terminals, operating at 166 MHz. It features a small outline package and thin profile, suitable for applications requiring high memory density and fast access times up to 5.5 ns. Ideal for commercial-grade devices needing synchronous memory technology.
IS43LD32128B-25BLI by Integrated Silicon Solution

IS43LD32128B-25BLI

Integrated Silicon Solution

IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.
IS42VM16200D-6BLI by Integrated Silicon Solution

IS42VM16200D-6BLI

Integrated Silicon Solution

IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.
M464S3254CTS-L7A by Samsung

M464S3254CTS-L7A

Samsung

Samsung M464S3254CTS-L7A is a 32MX64 DRAM module with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers 70°C max temp, DUAL BANK PAGE BURST access mode, and 8192 refresh cycles for efficient memory performance.
MT40A4G8NEA-062E:F by Micron Technology

MT40A4G8NEA-062E:F

Micron Technology

MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.
MT41J64M16JT-15EAIT:G by Micron Technology

MT41J64M16JT-15EAIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC16M16A2B4-7E:G by Micron Technology

MT48LC16M16A2B4-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:G is a 16MX16 DRAM with 3.3V supply, 143 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high-speed memory with common I/O type and self-refresh capability in a compact grid array package.
AS4C16M16SA-6TINTR by Alliance Memory

AS4C16M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C16M16SA-6TINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, ideal for industrial applications. Features include 3.3V supply voltage, 85°C operating temperature, and common I/O type. Suitable for systems requiring high-speed memory access in compact form factors.
K4S641632C-TC1L by Samsung

K4S641632C-TC1L

Samsung

Samsung's K4S641632C-TC1L is a 4MX16 DRAM with 3.3V supply, operating at 100MHz clock frequency. Ideal for commercial applications, it features synchronous operation, self-refresh capability, and a small outline package style.
MT40A256M16GE-083EAUT:BTR by Micron Technology

MT40A256M16GE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAUT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption in automotive electronics.
D2164A-15 by Intel

D2164A-15

Intel

Intel's D2164A-15 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 150ns. Ideal for commercial applications requiring high-speed memory solutions.
AS4C16M16SA-7TCNTR by Alliance Memory

AS4C16M16SA-7TCNTR

Alliance Memory

AS4C16M16SA-7TCNTR by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for applications requiring high-speed memory access in compact spaces due to its small outline and thin profile package style.
M471B5273CH0-CH9 by Samsung

M471B5273CH0-CH9

Samsung

Samsung M471B5273CH0-CH9 DDR DRAM Module features 256MX8 organization, operates at 667 MHz with 1.5V supply voltage. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
IS42S16800F-7TLI by Integrated Silicon Solution

IS42S16800F-7TLI

Integrated Silicon Solution

IS42S16800F-7TLI by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 143 MHz clock frequency, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 134217728 bits and supports a max access time of 5.4 ns.
IS43TR16512A-15HBLI by Integrated Silicon Solution

IS43TR16512A-15HBLI

Integrated Silicon Solution

IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.
MSM5416273-50GS-K by Lapis Semiconductor

MSM5416273-50GS-K

Lapis Semiconductor

MSM5416273-50GS-K by Lapis Semiconductor is a 256Kx16 DRAM with synchronous operation at 5V. It features fast page access mode, 50ns max access time, and video DRAM memory IC type. Ideal for applications requiring high-speed data storage in commercial temperature environments.
AS4C64M16D3LB-12BIN by Alliance Memory

AS4C64M16D3LB-12BIN

Alliance Memory

Alliance Memory's AS4C64M16D3LB-12BIN is a 64MX16 DDR3L DRAM with 1.35V supply, operating from -40 to 95 °C. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and thin profile grid array packaging.