Micron Technology - MT46H128M16LFDD-48WT:CTR

  1. Home
  2. Micron Technology - MT46H128M16LFDD-48WT:CTR
MT46H128M16LFDD-48WT:CTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT46H128M16LFDD-48WT:CTR
Description LPDDR1 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
Datasheet MT46H128M16LFDD-48WT:CTR Datasheet
In Stock1,115
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Memory IC Type: LPDDR1 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,115 - -

Popular Products

Category Top Products

MT48LC8M16A2TG-6A by Micron Technology

MT48LC8M16A2TG-6A

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for applications requiring high-speed memory operations in commercial temperature environments.
M366S1654ETS-C7A by Samsung

M366S1654ETS-C7A

Samsung

Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.
MT48LC8M16A2TG-75:GTR by Micron Technology

MT48LC8M16A2TG-75:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:GTR is a 3.3V, 8MX16 Synchronous DRAM with 70°C max temp. Features include self-refresh, 5.4ns access time, and 8388608 words capacity. Ideal for commercial applications requiring fast memory access in compact form factor.
IS42S32800J-6BLI-TR by Integrated Silicon Solution

IS42S32800J-6BLI-TR

Integrated Silicon Solution

IS42S32800J-6BLI-TR by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.
AS4C4M16SA-6BINTR by Alliance Memory

AS4C4M16SA-6BINTR

Alliance Memory

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.
IS42S32400F-6BLI-TR by Integrated Silicon Solution

IS42S32400F-6BLI-TR

Integrated Silicon Solution

IS42S32400F-6BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times in a grid array package.
S27KS0642GABHI030 by Infineon Technologies

S27KS0642GABHI030

Infineon Technologies

Infineon's S27KS0642GABHI030 is a 8MX8 DRAM with 67108864 bit memory density. Operating at 200 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring fast data access and low power consumption in compact devices.
D2164A-20 by Intel

D2164A-20

Intel

Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.
MT48LC32M16A2P-75IT by Micron Technology

MT48LC32M16A2P-75IT

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact small outline package design.
LH64256BK-70 by Sharp Corporation

LH64256BK-70

Sharp Corporation

LH64256BK-70 by Sharp Corp is a 256Kx4 DRAM with 512 refresh cycles, operating at 70ns access time. It features a CMOS technology, 3-STATE output characteristics, and operates in FAST PAGE mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.
W63AH2NBVABE by Winbond Electronics

W63AH2NBVABE

Winbond Electronics

Winbond Electronics' W63AH2NBVABE is a LPDDR3 DRAM with 32MX32 organization, 800 MHz clock frequency, and 1.2V nominal voltage. Ideal for applications requiring high-speed synchronous memory operations in compact devices due to its very thin profile and fine pitch grid array package style.
MT53E256M16D1FW-046WT:B by Micron Technology

MT53E256M16D1FW-046WT:B

Micron Technology

LPDDR4 DRAM;
MT48LC16M16A2BG-75:D by Micron Technology

MT48LC16M16A2BG-75:D

Micron Technology

Micron Technology's MT48LC16M16A2BG-75:D is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. It features a very thin profile grid array package suitable for commercial applications requiring fast access time of 5.4ns and supports common I/O type with self-refresh capability.
IS43TR16256BL-125KBL by Integrated Silicon Solution

IS43TR16256BL-125KBL

Integrated Silicon Solution

IS43TR16256BL-125KBL by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for surface mount applications. With a memory density of 4294967296 bit, it is ideal for multi-bank page burst access in various electronic devices.
IS42S16800F-6BLI by Integrated Silicon Solution

IS42S16800F-6BLI

Integrated Silicon Solution

IS42S16800F-6BLI by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring high memory density and fast access times.
SQR-SD3M-8G1K6SNLB by Advantech

SQR-SD3M-8G1K6SNLB

Advantech

Advantech's SQR-SD3M-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and synchronous operation in a compact MICROELECTRONIC ASSEMBLY package.
HYB25D512160BE-6 by Qimonda Ag

HYB25D512160BE-6

Qimonda Ag

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
NT5AD512M16A4-HRI by Nanya Technology

NT5AD512M16A4-HRI

Nanya Technology

NT5AD512M16A4-HRI by Nanya Technology is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like servers, PCs, and networking equipment.
MT48LC32M16A2P-75 by Micron Technology

MT48LC32M16A2P-75

Micron Technology

MT48LC32M16A2P-75 by Micron Technology is a 32MX16 DRAM with 3.3V supply, 133MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring synchronous memory with common I/O and self-refresh capabilities.
MT48H32M16LFB4-6IT:C by Micron Technology

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.