Micron Technology - MT46H256M32L4SA-48WT:C

  1. Home
  2. Micron Technology - MT46H256M32L4SA-48WT:C
MT46H256M32L4SA-48WT:C by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT46H256M32L4SA-48WT:C
Description LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: SQUARE;
Datasheet MT46H256M32L4SA-48WT:C Datasheet
In Stock2,051
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .00001 Amp
Organization: 256MX32
Output Characteristics: 3-STATE
Maximum Time At Peak Reflow Temperature (s): 30
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 90 mA
No. of Terminals: 168
Maximum Clock Frequency (fCLK): 208 MHz
No. of Words: 268435456 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: S-PBGA-B168
Package Shape: SQUARE
Terminal Form: BALL
Maximum Operating Temperature: 85 Cel
Package Code: FBGA
Other Names: MT46H256M32L4SA-48WT:C
MT46H256M32L4SA-48 WT:C-ND
Input/Output Type: COMMON
Memory Density: 8589934592 bit
Sequential Burst Length: 2,4,8,16
Memory IC Type: LPDDR1 DRAM
Minimum Operating Temperature: -25 Cel
Memory Width: 32
Qualification: Not Qualified
Package Equivalence Code: BGA168,23X23,20
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8,16
Maximum Access Time: 5 ns
No. of Words Code: 256M
Nominal Supply Voltage / Vsup (V): 1.8
Peak Reflow Temperature (C): 260
Terminal Pitch: .5 mm
Temperature Grade: OTHER
Power Supplies (V): 1.8
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,051 - -

Popular Products

Category Top Products

M393B5673GB0-CH9 by Samsung

M393B5673GB0-CH9

Samsung

Samsung M393B5673GB0-CH9 DDR DRAM MODULE features 256MX72 organization, operates at 667 MHz clock frequency, and has a memory density of 19327352832 bit. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
K4B1G0846G-BCH9 by Samsung

K4B1G0846G-BCH9

Samsung

Samsung's K4B1G0846G-BCH9 DDR3 DRAM features 128MX8 organization, 667 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max supply current of 130 mA.
IS42S32800J-7BLI by Integrated Silicon Solution

IS42S32800J-7BLI

Integrated Silicon Solution

IS42S32800J-7BLI by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at a max frequency of 143 MHz. Ideal for industrial applications requiring fast memory access and common I/O type in a compact GRID ARRAY package.
M378A1K43CB2-CRC by Samsung

M378A1K43CB2-CRC

Samsung

Samsung M378A1K43CB2-CRC DDR4 DRAM Module features 1GX64 organization, operates at 1200 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring synchronous operation and common I/O type with self-refresh capability.
IS42VS16160J-75TLI by Integrated Silicon Solution

IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.
MT47H128M8SH-25EIT:M by Micron Technology

MT47H128M8SH-25EIT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
AS4C4M16SA-6BINTR by Alliance Memory

AS4C4M16SA-6BINTR

Alliance Memory

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.
M471B5273CH0-CH9 by Samsung

M471B5273CH0-CH9

Samsung

Samsung M471B5273CH0-CH9 DDR DRAM Module features 256MX8 organization, operates at 667 MHz with 1.5V supply voltage. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
MT47H64M16HR-3L:H by Micron Technology

MT47H64M16HR-3L:H

Micron Technology

MT47H64M16HR-3L:H by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and consumes up to 230 mA. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC16M16A2P-6A by Micron Technology

MT48LC16M16A2P-6A

Micron Technology

MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.
IS42S16400J-6TLI by Integrated Silicon Solution

IS42S16400J-6TLI

Integrated Silicon Solution

IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.
MT47H32M16NF-25EAIT:H by Micron Technology

MT47H32M16NF-25EAIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
K4T51163QI-HCE7 by Samsung

K4T51163QI-HCE7

Samsung

Samsung's K4T51163QI-HCE7 is a 32MX16 DDR2 DRAM with 84 terminals in a GRID ARRAY package. It operates at 400 MHz, has a memory density of 536870912 bit, and supports a max clock frequency of 0.4 ns. Ideal for applications requiring high-speed data processing and storage capabilities.
MT47H64M16HR-25EIT:H by Micron Technology

MT47H64M16HR-25EIT:H

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:H is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC4M32B2B5-6AXIT:L by Micron Technology

MT48LC4M32B2B5-6AXIT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AXIT:L is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, very thin profile package style, and industrial temperature grade. Ideal for applications requiring fast access time, such as networking equipment and industrial automation systems.
AS4C32M16SB-7TIN by Alliance Memory

AS4C32M16SB-7TIN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TIN is a 32MX16 SDRAM with 3.3V supply, operating from -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in compact form factors.
IS42S32400F-6TLI-TR by Integrated Silicon Solution

IS42S32400F-6TLI-TR

Integrated Silicon Solution

IS42S32400F-6TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, operating at 166 MHz. It features a small outline package and is ideal for industrial applications requiring high memory density and fast access times.
MT41J128M16JT-093:K by Micron Technology

MT41J128M16JT-093:K

Micron Technology

Micron Technology's MT41J128M16JT-093:K is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT53D512M32D2DS-053AUT:D by Micron Technology

MT53D512M32D2DS-053AUT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053AUT:D is a 512MX32 LPDDR4 DRAM with 1.1V, -40 to 125 °C temp range, and 1866 MHz clock freq. Ideal for automotive applications due to its robust design and high memory density of 17.18 Gb.
M378B5773DH0-CH9 by Samsung

M378B5773DH0-CH9

Samsung

Samsung M378B5773DH0-CH9 DDR DRAM offers 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed data processing and large memory capacity in microelectronic assemblies.