Micron Technology - MT46H32M32LFCM-5IT:AT

  1. Home
  2. Micron Technology - MT46H32M32LFCM-5IT:AT
MT46H32M32LFCM-5IT:AT by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT46H32M32LFCM-5IT:AT
Description LPDDR1 DRAM;
Datasheet MT46H32M32LFCM-5IT:AT Datasheet
In Stock108
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
108 - -

Popular Products

Category Top Products

MT40A1G16RC-062EIT:B by Micron Technology

MT40A1G16RC-062EIT:B

Micron Technology

Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
S27KL0642GABHI020 by Cypress Semiconductor

S27KL0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;
AS4C32M16SB-6TINTR by Alliance Memory

AS4C32M16SB-6TINTR

Alliance Memory

SYNCHRONOUS DRAM; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
M378B5773CH0-CH9 by Samsung

M378B5773CH0-CH9

Samsung

Samsung M378B5773CH0-CH9 DDR3 DRAM offers 256MX64 organization, operates at 667 MHz with 1.5V supply. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
IS43TR16256AL-125KBLI by Integrated Silicon Solution

IS43TR16256AL-125KBLI

Integrated Silicon Solution

IS43TR16256AL-125KBLI by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.
IS43TR16512BL-125KBLI by Integrated Silicon Solution

IS43TR16512BL-125KBLI

Integrated Silicon Solution

IS43TR16512BL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.
MT41K128M16JT-125IT:KTR by Micron Technology

MT41K128M16JT-125IT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT48LC4M32B2TG-7IT:G by Micron Technology

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.
AS4C512M8D4-83BIN by Alliance Memory

AS4C512M8D4-83BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
IS42S16800F-6BLI-TR by Integrated Silicon Solution

IS42S16800F-6BLI-TR

Integrated Silicon Solution

IS42S16800F-6BLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 166 MHz fCLK, 3.3V supply, and -40 to 85°C temp range. Ideal for industrial applications requiring high-speed memory access in a compact GRID ARRAY package.
W9825G6KH-6I by Winbond Electronics

W9825G6KH-6I

Winbond Electronics

W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
K4A8G165WB-BCRC by Samsung

K4A8G165WB-BCRC

Samsung

Samsung's K4A8G165WB-BCRC is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT40A1G16KNR-062E:E by Micron Technology

MT40A1G16KNR-062E:E

Micron Technology

Micron Technology's MT40A1G16KNR-062E:E is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Suitable for applications requiring high-speed data processing in devices with limited space and power constraints.
S27KL0642DPBHI020 by Cypress Semiconductor

S27KL0642DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Memory Density: 67108864 bit;
MT53E1G32D2FW-046AUT:B by Micron Technology

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.
K4S561632J-UC75 by Samsung

K4S561632J-UC75

Samsung

Samsung's K4S561632J-UC75 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices due to its small form factor, low power consumption, and fast access time of 5.4 ns.
MT48LC32M16A2TG-75L:C by Micron Technology

MT48LC32M16A2TG-75L:C

Micron Technology

Micron Technology's MT48LC32M16A2TG-75L:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT48LC16M16A2P-75IT by Micron Technology

MT48LC16M16A2P-75IT

Micron Technology

Micron Technology's MT48LC16M16A2P-75IT is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package design.
MT48LC32M16A2P-75IT:C by Micron Technology

MT48LC32M16A2P-75IT:C

Micron Technology

MT48LC32M16A2P-75IT:C by Micron Technology is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density in a small outline package.