Micron Technology - MT46H64M32LFBQ-48AIT:CTR

  1. Home
  2. Micron Technology - MT46H64M32LFBQ-48AIT:CTR
MT46H64M32LFBQ-48AIT:CTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT46H64M32LFBQ-48AIT:CTR
Description LPDDR1 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;
Datasheet MT46H64M32LFBQ-48AIT:CTR Datasheet
In Stock678
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Memory IC Type: LPDDR1 DRAM
Terminal Finish: TIN SILVER COPPER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
678 - -

Popular Products

Category Top Products

S70KL1282DPBHA020 by Cypress Semiconductor

S70KL1282DPBHA020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Screening Level: AEC-Q100;
IS42VS16160J-75TLI by Integrated Silicon Solution

IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.
MT53E512M32D1ZW-046WT:B by Micron Technology

MT53E512M32D1ZW-046WT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT48LC8M16A2P-6A:G by Micron Technology

MT48LC8M16A2P-6A:G

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
W66CP2NQUAGJ by Winbond Electronics

W66CP2NQUAGJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.
MT40A256M16LY-062EIT:F by Micron Technology

MT40A256M16LY-062EIT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT47H128M8SH-25EAIT:M by Micron Technology

MT47H128M8SH-25EAIT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EAIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as automotive electronics or industrial control systems.
K4S561632E-UC75 by Samsung

K4S561632E-UC75

Samsung

Samsung's K4S561632E-UC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT46V16M16P-5B:MTR by Micron Technology

MT46V16M16P-5B:MTR

Micron Technology

Micron Technology's MT46V16M16P-5B:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for applications requiring fast access times and high memory capacity in commercial temperature environments.
MT41K1G8RKB-107:P by Micron Technology

MT41K1G8RKB-107:P

Micron Technology

Micron Technology's MT41K1G8RKB-107:P is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and laptops.
M386A8K40BM1-CRC by Samsung

M386A8K40BM1-CRC

Samsung

Samsung's M386A8K40BM1-CRC is a DDR DRAM MODULE with 8GX72 organization, 72 memory width, and 618475290624 bit memory density. It operates synchronously at 1.2V, featuring self-refresh capability for various applications requiring high-speed data processing in microelectronic assemblies.
MT41K128M16JT-107:KTR by Micron Technology

MT41K128M16JT-107:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption.
KVR1333D3S9/4GKC by Kingston Technology Company

KVR1333D3S9/4GKC

Kingston Technology Company

DDR DRAM MODULE;
MT48LC4M32B2B5-6A:LTR by Micron Technology

MT48LC4M32B2B5-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.
KM41C256P-7 by Samsung

KM41C256P-7

Samsung

Samsung's KM41C256P-7 is a 256Kx1 DRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 70ns and features fast page access mode. Ideal for commercial applications requiring high-speed data storage in a compact IN-LINE package.
S27KS0642GABHI030 by Infineon Technologies

S27KS0642GABHI030

Infineon Technologies

Infineon's S27KS0642GABHI030 is a 8MX8 DRAM with 67108864 bit memory density. Operating at 200 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring fast data access and low power consumption in compact devices.
K4S561632C-TC75 by Samsung

K4S561632C-TC75

Samsung

Samsung's K4S561632C-TC75 is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for commercial applications, it offers 16777216 words memory density and supports four bank page burst access mode.
AS4C64M16D2A-25BCNTR by Alliance Memory

AS4C64M16D2A-25BCNTR

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M393B4G70DM0-YK0 by Samsung

M393B4G70DM0-YK0

Samsung

Samsung M393B4G70DM0-YK0 DDR DRAM MODULE offers 4GX72 organization, 1.35V nominal voltage, and 309237645312 bit memory density. Ideal for servers requiring high-capacity and high-speed memory with synchronous operation and self-refresh capability.
MT48LC2M32B2P-6AIT:J by Micron Technology

MT48LC2M32B2P-6AIT:J

Micron Technology

Micron Technology's MT48LC2M32B2P-6AIT:J is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications. With a low standby current of 0.0025 Amp and common I/O type, it offers fast access time of 5.4 ns.