Micron Technology - MT47H128M8CF-25S:H

  1. Home
  2. Micron Technology - MT47H128M8CF-25S:H
MT47H128M8CF-25S:H by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT47H128M8CF-25S:H
Description DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words;
Datasheet MT47H128M8CF-25S:H Datasheet
In Stock1,042
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 128MX8
Access Mode: MULTI BANK PAGE BURST
Surface Mount: YES
No. of Terminals: 60
No. of Words: 134217728 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
JESD-30 Code: R-PBGA-B60
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: BGA
No. of Ports: 1
Memory Density: 1073741824 bit
Self Refresh: YES
Memory IC Type: DDR2 DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 8
No. of Functions: 1
No. of Words Code: 128M
Additional Features: SELF REFRESH
Temperature Grade: OTHER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,042 - -

Popular Products

Category Top Products

MT47H128M8JN-3IT:H by Micron Technology

MT47H128M8JN-3IT:H

Micron Technology

MT47H128M8JN-3IT:H by Micron Technology is a DDR2 DRAM with 128MX8 organization and 1.8V nominal voltage. It operates synchronously at a max clock frequency of 333 MHz and is commonly used in industrial applications requiring high memory density and fast access times.
AS4C128M16D3LC-12BINTR by Alliance Memory

AS4C128M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C128M16D3LC-12BINTR is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates at 1.35V, has 96 terminals in a grid array package style, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.
MT41K256M16TW-107AAT:PTR by Micron Technology

MT41K256M16TW-107AAT:PTR

Micron Technology

MT41K256M16TW-107AAT:PTR by Micron Technology is a DDR3L DRAM with 256MX16 organization, operating at a max clock frequency of 934.57 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
MT41K256M8DA-125:K by Micron Technology

MT41K256M8DA-125:K

Micron Technology

Micron Technology's MT41K256M8DA-125:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as servers, workstations, and networking equipment.
M378B5673EH1-CF8 by Samsung

M378B5673EH1-CF8

Samsung

Samsung M378B5673EH1-CF8 DDR DRAM Module has 256MX64 organization, operates at 533 MHz with 3-STATE output. Ideal for high-performance computing applications due to its synchronous operation and dual bank page burst access mode.
MT46H32M16LFBF-6IT:BTR by Micron Technology

MT46H32M16LFBF-6IT:BTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:BTR is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. It operates synchronously at a max temperature of 85°C and is ideal for industrial applications requiring fast access times and low power consumption.
MT48LC4M32B2P-6AXIT:LTR by Micron Technology

MT48LC4M32B2P-6AXIT:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6AXIT:LTR is a 4MX32 Synchronous DRAM with a memory density of 134217728 bits. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.
K4A8G085WB-BCPB by Samsung

K4A8G085WB-BCPB

Samsung

Samsung's K4A8G085WB-BCPB DDR4 DRAM features 1066 MHz clock frequency, 78 terminals, and 1.2V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage with a memory density of 8.59 Gb.
K4M281633H-BN75 by Samsung

K4M281633H-BN75

Samsung

Samsung's K4M281633H-BN75 DRAM features 8MX16 organization, 16-bit memory width, and 133 MHz clock frequency. Ideal for applications requiring high-speed data processing with a max operating temperature of 85°C. The package style is grid array with fine pitch, making it suitable for compact electronic devices.
MT61K256M32JE-14:A by Micron Technology

MT61K256M32JE-14:A

Micron Technology

Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.
MT41K256M16HA-125:E by Micron Technology

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.
AS4C8M16SA-6TIN by Alliance Memory

AS4C8M16SA-6TIN

Alliance Memory

Alliance Memory's AS4C8M16SA-6TIN is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a fast access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring reliable synchronous memory with small outline package style.
IS42S32800J-7TLI by Integrated Silicon Solution

IS42S32800J-7TLI

Integrated Silicon Solution

IS42S32800J-7TLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
M393B1K70DH0-CK0 by Samsung

M393B1K70DH0-CK0

Samsung

Samsung's M393B1K70DH0-CK0 is a 1GX72 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.5V, it offers 1073741824 words memory capacity and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution

IS43TR16256BL-125KBLI-TR

Integrated Silicon Solution

IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
IS43QR16256B-083RBL by Integrated Silicon Solution

IS43QR16256B-083RBL

Integrated Silicon Solution

IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
MT40A512M16JY-083EAAT:B by Micron Technology

MT40A512M16JY-083EAAT:B

Micron Technology

Micron Technology's MT40A512M16JY-083EAAT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features a thin profile grid array package and operates in synchronous mode with self-refresh capability. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial systems.
K4S561632E-TC75 by Samsung

K4S561632E-TC75

Samsung

Samsung's K4S561632E-TC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT40A2G8JC-062E:E by Micron Technology

MT40A2G8JC-062E:E

Micron Technology

Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
MT48LC4M32B2B5-7:G by Micron Technology

MT48LC4M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;