Micron Technology - MT48LC8M16A2B4-6AIT:L

  1. Home
  2. Micron Technology - MT48LC8M16A2B4-6AIT:L
MT48LC8M16A2B4-6AIT:L by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT48LC8M16A2B4-6AIT:L
Description SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;
Datasheet MT48LC8M16A2B4-6AIT:L Datasheet
In Stock1,465
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 3 V
Sub-Category: DRAMs
Surface Mount: YES
Screening Level: AEC-Q100
Technology: CMOS
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: VFBGA
Input/Output Type: COMMON
No. of Ports: 1
Self Refresh: YES
Sequential Burst Length: 1,2,4,8,FP
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: BGA54,9X9,32
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Maximum Standby Current: .0025 Amp
Organization: 8MX16
Output Characteristics: 3-STATE
Maximum Seated Height: 1 mm
Maximum Supply Current: 100 mA
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 54
Maximum Clock Frequency (fCLK): 167 MHz
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
JESD-30 Code: S-PBGA-B54
Maximum Operating Temperature: 85 Cel
Width: 8 mm
Other Names: MT48LC8M16A2B4-6A IT:L-ND
MT48LC8M16A2B4-6AIT:L
Memory Density: 134217728 bit
Memory IC Type: SYNCHRONOUS DRAM
JESD-609 Code: e1
Minimum Operating Temperature: -40 Cel
No. of Functions: 1
Refresh Cycles: 4096
Interleaved Burst Length: 1,2,4,8
Length: 8 mm
Maximum Access Time: 5.4 ns
No. of Words Code: 8M
Nominal Supply Voltage / Vsup (V): 3.3
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 3.6 V
Power Supplies (V): 3.3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,465 - -

Popular Products

Category Top Products

W956D8MBYA5I by Winbond Electronics

W956D8MBYA5I

Winbond Electronics

W956D8MBYA5I by Winbond Electronics is an 8MX8 DRAM with a memory density of 67108864 bit. It operates at a max clock frequency of 200 MHz and has a self-refresh feature. This HYPERRAM is suitable for applications requiring high-speed synchronous memory with low power consumption.
MT41K512M8DA-107AAT:P by Micron Technology

MT41K512M8DA-107AAT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AAT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
MT53E512M32D1ZW-046AAT:B by Micron Technology

MT53E512M32D1ZW-046AAT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046AAT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT47H64M16HR-3IT:H by Micron Technology

MT47H64M16HR-3IT:H

Micron Technology

Micron Technology's MT47H64M16HR-3IT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
EDB4432BBBJ-1DAIT-F-R by Micron Technology

EDB4432BBBJ-1DAIT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.
MT48LC8M16A2B4-6AIT:L by Micron Technology

MT48LC8M16A2B4-6AIT:L

Micron Technology

Micron Technology's MT48LC8M16A2B4-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh capability and offers a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current consumption.
IS42S32400F-6BL-TR by Integrated Silicon Solution

IS42S32400F-6BL-TR

Integrated Silicon Solution

IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.
IS42S16320F-7TL-TR by Integrated Silicon Solution

IS42S16320F-7TL-TR

Integrated Silicon Solution

IS42S16320F-7TL-TR by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 536870912-bit memory density. It operates at 3.3V, has a 70°C max temp, and offers self-refresh capability. Ideal for applications requiring fast access times and high memory density in commercial-grade environments.
HYB25D512160BE-6 by Infineon Technologies

HYB25D512160BE-6

Infineon Technologies

HYB25D512160BE-6 by Infineon Technologies is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates at a max clock frequency of 166 MHz and has a memory density of 536870912 bits. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT47H64M16HR-3AIT:H by Micron Technology

MT47H64M16HR-3AIT:H

Micron Technology

Micron Technology's MT47H64M16HR-3AIT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. With AEC-Q100 screening level, it offers reliable performance in automotive electronics.
IS42S32400F-6BLI by Integrated Silicon Solution

IS42S32400F-6BLI

Integrated Silicon Solution

IS42S32400F-6BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 166MHz clock frequency. It features self-refresh mode, common I/O type, and supports four-bank page burst access. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
MT47H128M16RT-25EIT:C by Micron Technology

MT47H128M16RT-25EIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a max clock frequency of 400 MHz and offers a memory density of 2147483648 bit. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS43TR16256BL-125KBL by Integrated Silicon Solution

IS43TR16256BL-125KBL

Integrated Silicon Solution

IS43TR16256BL-125KBL by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for surface mount applications. With a memory density of 4294967296 bit, it is ideal for multi-bank page burst access in various electronic devices.
MT40A2G8JE-062EAAT:E by Micron Technology

MT40A2G8JE-062EAAT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.
AS4C256M16D3LC-12BINTR by Alliance Memory

AS4C256M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BINTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
MTA16ATF2G64HZ-2G6E1 by Micron Technology

MTA16ATF2G64HZ-2G6E1

Micron Technology

Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.
MT40A1G8SA-075:E by Micron Technology

MT40A1G8SA-075:E

Micron Technology

MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.
IS42S32800J-6TLI by Integrated Silicon Solution

IS42S32800J-6TLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
K4S281632I-UC60 by Samsung

K4S281632I-UC60

Samsung

Samsung's K4S281632I-UC60 is a 3.3V DRAM with 8MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.