Micron Technology - MT49H16M18BM-25E

  1. Home
  2. Micron Technology - MT49H16M18BM-25E
MT49H16M18BM-25E by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT49H16M18BM-25E
Description DDR DRAM;
Datasheet MT49H16M18BM-25E Datasheet
In Stock2,259
NAME DESCRIPTION
Memory IC Type: DDR DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,259 - -

Popular Products

Category Top Products

K4S511632D-UC75 by Samsung

K4S511632D-UC75

Samsung

Samsung's K4S511632D-UC75 is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it features synchronous operation, self-refresh capability, and a small outline package style.
MT47H64M16HR-3:G by Micron Technology

MT47H64M16HR-3:G

Micron Technology

Micron Technology's MT47H64M16HR-3:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and networking equipment.
KVR1333D3S9/4G by Kingston Technology Company

KVR1333D3S9/4G

Kingston Technology Company

DRAMs;
MT53E256M32D2DS-053WT:B by Micron Technology

MT53E256M32D2DS-053WT:B

Micron Technology

LPDDR4 DRAM;
MT48LC8M16A2P-7EIT:G by Micron Technology

MT48LC8M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
MT53E768M32D4DE-046AAT:E by Micron Technology

MT53E768M32D4DE-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.
MT53E128M32D2DS-053AUT:A by Micron Technology

MT53E128M32D2DS-053AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.
M366S1654ETS-C7A by Samsung

M366S1654ETS-C7A

Samsung

Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.
MT53D1024M32D4DT-046WT:D by Micron Technology

MT53D1024M32D4DT-046WT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046WT:D is a LPDDR4 DRAM with 1GX32 organization, 1073741824 words capacity, and 2136.7 MHz clock frequency. It operates synchronously at 1.8V for applications requiring high-speed memory access in compact devices like smartphones and tablets.
M378T5263AZ3-CF7 by Samsung

M378T5263AZ3-CF7

Samsung

Samsung M378T5263AZ3-CF7 DDR DRAM Module features 512MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT48H32M16LFB4-6IT:C by Micron Technology

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
W9825G6KH-6I by Winbond Electronics

W9825G6KH-6I

Winbond Electronics

W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
MT46V16M16P-5BIT:M by Micron Technology

MT46V16M16P-5BIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT53E1G16D1FW-046AIT:A by Micron Technology

MT53E1G16D1FW-046AIT:A

Micron Technology

LPDDR4 DRAM;
MT40A256M16LY-062EAIT:FTR by Micron Technology

MT40A256M16LY-062EAIT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.
W3H64M72E-533SBI by Microsemi

W3H64M72E-533SBI

Microsemi

The Microsemi W3H64M72E-533SBI DDR2 DRAM features 64MX72 organization, 267 MHz clock frequency, and 1.8V nominal voltage. Ideal for industrial applications requiring high memory density and fast access times in a synchronous operating mode.
MT48LC8M16A2P-6A:LTR by Micron Technology

MT48LC8M16A2P-6A:LTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:LTR is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers 5.4ns max access time and features self-refresh capability. Ideal for commercial applications requiring fast and reliable memory performance in a compact small outline package.
M386A8K40BM1-CRC by Samsung

M386A8K40BM1-CRC

Samsung

Samsung's M386A8K40BM1-CRC is a DDR DRAM MODULE with 8GX72 organization, 72 memory width, and 618475290624 bit memory density. It operates synchronously at 1.2V, featuring self-refresh capability for various applications requiring high-speed data processing in microelectronic assemblies.
MT53E256M32D2DS-053AIT:B by Micron Technology

MT53E256M32D2DS-053AIT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-053AIT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features a very thin profile, fine pitch grid array package style and supports common I/O type. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
K4F6E3S4HM-MGCJ by Samsung Electro-mechanics

K4F6E3S4HM-MGCJ

Samsung Electro-mechanics

Samsung Electro-mechanics' K4F6E3S4HM-MGCJ is a LPDDR4 DRAM with 512MX32 organization, 17179869184 bit memory density, and operates at 1.1V. It features a GRID ARRAY package style and is suitable for applications requiring high-speed data processing in devices such as smartphones and tablets.