Micron Technology - MT4C8512D18ADC2-6

  1. Home
  2. Micron Technology - MT4C8512D18ADC2-6
MT4C8512D18ADC2-6 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT4C8512D18ADC2-6
Description OTHER DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 65; Package Code: DIE; Refresh Cycles: 1024; Package Shape: UNSPECIFIED;
Datasheet MT4C8512D18ADC2-6 Datasheet
In Stock2,178
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 512KX8
Output Characteristics: 3-STATE
Access Mode: FAST PAGE
Minimum Supply Voltage (Vsup): 4.5 V
Surface Mount: YES
No. of Terminals: 65
No. of Words: 524288 words
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
Technology: CMOS
JESD-30 Code: X-XUUC-N65
Package Shape: UNSPECIFIED
Terminal Form: NO LEAD
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: DIE
No. of Ports: 1
Memory Density: 4194304 bit
Memory IC Type: OTHER DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 8
No. of Functions: 1
Qualification: Not Qualified
Refresh Cycles: 1024
Maximum Access Time: 60 ns
No. of Words Code: 512K
Nominal Supply Voltage / Vsup (V): 5
Additional Features: RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,178 - -

Popular Products

Category Top Products

IS42S32160D-7BLI by Integrated Silicon Solution

IS42S32160D-7BLI

Integrated Silicon Solution

IS42S32160D-7BLI by Integrated Silicon Solution is a 16MX32 SYNCHRONOUS DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for INDUSTRIAL applications, it features FOUR BANK PAGE BURST access mode and offers a memory density of 536870912 bit.
K4S561632C-TC75 by Samsung

K4S561632C-TC75

Samsung

Samsung's K4S561632C-TC75 is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for commercial applications, it offers 16777216 words memory density and supports four bank page burst access mode.
S70KS1282GABHB030 by Infineon Technologies

S70KS1282GABHB030

Infineon Technologies

S70KS1282GABHB030 by Infineon Technologies is a 16MX8 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. It is designed for applications requiring high-speed synchronous memory, such as automotive electronics and industrial control systems.
MT53D512M16D1DS-046WT:D by Micron Technology

MT53D512M16D1DS-046WT:D

Micron Technology

LPDDR4 DRAM;
IS42S32800G-7BLI by Integrated Silicon Solution

IS42S32800G-7BLI

Integrated Silicon Solution

IS42S32800G-7BLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has a min operating temperature of -40 °C. It is commonly used in industrial applications requiring high-speed memory access.
MT44K16M36RB-093:A by Micron Technology

MT44K16M36RB-093:A

Micron Technology

Micron Technology's MT44K16M36RB-093:A is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT46H32M16LFBF-6IT:C by Micron Technology

MT46H32M16LFBF-6IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.
MT40A512M16LY-062EAT:E by Micron Technology

MT40A512M16LY-062EAT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAT:E is a DDR4 DRAM with 512MX16 organization and 8589934592 bit memory density. It operates at a voltage of 1.2V, has a temperature range of -40 to 105°C, and is suitable for industrial applications.
W631GU6NB-12 by Winbond Electronics

W631GU6NB-12

Winbond Electronics

W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16LY-062EAUT:ETR by Micron Technology

MT40A512M16LY-062EAUT:ETR

Micron Technology

MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.
SQR-SD3I-8G1K6SNLB by Advantech

SQR-SD3I-8G1K6SNLB

Advantech

Advantech's SQR-SD3I-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and reliable performance in a wide temperature range from -40 to 85°C.
KM48S8030AT-G10 by Samsung

KM48S8030AT-G10

Samsung

Samsung's KM48S8030AT-G10 is an 8MX8 Synchronous DRAM with 67108864-bit memory density. It operates at a max clock frequency of 100 MHz and has a small outline, thin profile package style. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT46H128M16LFB7-6IT:B by Micron Technology

MT46H128M16LFB7-6IT:B

Micron Technology

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
LH2464-10 by Sharp Corporation

LH2464-10

Sharp Corporation

Sharp Corporation's LH2464-10 is a 64KX4 PAGE MODE DRAM with 3-STATE output. Operating at 5V, it offers a memory density of 262144 bit and refresh cycles of 256. Ideal for commercial applications, this DRAM has a max access time of 100 ns and operates in asynchronous mode.
W631GG6NB-12 by Winbond Electronics

W631GG6NB-12

Winbond Electronics

Winbond Electronics' W631GG6NB-12 is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz. It features a 96-terminal grid array package suitable for synchronous applications. With a low standby current of 0.04 Amp and common I/O type, it's ideal for high-speed memory requirements in various electronic devices.
MT48LC8M16A2TG-7E by Micron Technology

MT48LC8M16A2TG-7E

Micron Technology

Micron Technology's MT48LC8M16A2TG-7E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for commercial applications requiring fast memory access and low power consumption.
IS43R16800E-6TLI by Integrated Silicon Solution

IS43R16800E-6TLI

Integrated Silicon Solution

IS43R16800E-6TLI by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with 134217728-bit memory density. Operating at 167 MHz, it features a 2.5V supply voltage and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.
MT48LC16M16A2TG-75 by Micron Technology

MT48LC16M16A2TG-75

Micron Technology

MT48LC16M16A2TG-75 by Micron Technology is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for synchronous memory applications requiring fast access times and low power consumption.
MT48LC4M32B2TG-7IT:G by Micron Technology

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
MT53E256M16D1FW-046WT:B by Micron Technology

MT53E256M16D1FW-046WT:B

Micron Technology

LPDDR4 DRAM;