Micron Technology - MT4JSF6464HY-80CB1

  1. Home
  2. Micron Technology - MT4JSF6464HY-80CB1
MT4JSF6464HY-80CB1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT4JSF6464HY-80CB1
Description DRAMs;
Datasheet MT4JSF6464HY-80CB1 Datasheet
In Stock1,671
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,671 - -

Popular Products

Category Top Products

AS4C1G8MD3L-12BCN by Alliance Memory

AS4C1G8MD3L-12BCN

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
AS4C512M16D3LC-12BCN by Alliance Memory

AS4C512M16D3LC-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
MT46H32M16LFBF-6IT:CTR by Micron Technology

MT46H32M16LFBF-6IT:CTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT48LC16M16A2B4-6AIT:G by Micron Technology

MT48LC16M16A2B4-6AIT:G

Micron Technology

MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
KM416S4020AT-G10 by Samsung

KM416S4020AT-G10

Samsung

Samsung's KM416S4020AT-G10 is a 4MX16 DRAM with 3.3V supply, operating at 100MHz. It features a small outline, thin profile package and offers 67108864 bits memory density. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT48LC16M16A2P-7E by Micron Technology

MT48LC16M16A2P-7E

Micron Technology

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT8JTF12864HZ-1G6G1 by Micron Technology

MT8JTF12864HZ-1G6G1

Micron Technology

Micron Technology's MT8JTF12864HZ-1G6G1 is a 128MX64 DDR DRAM MODULE with 204 terminals, operating at 800 MHz. It has a memory density of 8589934592 bits and supports a max clock frequency of 800 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.
M12L64164A-5BIG2Y by Elite Semiconductor Microelectronics Technologyinc

M12L64164A-5BIG2Y

Elite Semiconductor Microelectronics Technologyinc

Elite Semiconductor Microelectronics Technologyinc's M12L64164A-5BIG2Y is a 4MX16 Synchronous DRAM with 67108864 bit memory density. Operating at 3.3V, it offers a max access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.
MT41K512M16VRP-107IT:P by Micron Technology

MT41K512M16VRP-107IT:P

Micron Technology

DRAMs; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
NT5CC256M16CP-DII by Nanya Technology

NT5CC256M16CP-DII

Nanya Technology

NT5CC256M16CP-DII by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT47H32M16NF-25EIT:HTR by Micron Technology

MT47H32M16NF-25EIT:HTR

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
AS4C256M16D3LC-12BINTR by Alliance Memory

AS4C256M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BINTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
MT8KTF51264HZ-1G9P1 by Micron Technology

MT8KTF51264HZ-1G9P1

Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.
IS42S32400F-6BL by Integrated Silicon Solution

IS42S32400F-6BL

Integrated Silicon Solution

IS42S32400F-6BL by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT40A256M16LY-062EAUT:F by Micron Technology

MT40A256M16LY-062EAUT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
S70KL1282DPBHA023 by Cypress Semiconductor

S70KL1282DPBHA023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Technology: CMOS;
MT46V32M16P-5BAIT:J by Micron Technology

MT46V32M16P-5BAIT:J

Micron Technology

Micron Technology's MT46V32M16P-5BAIT:J is a DDR1 DRAM with 32MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in a compact small outline package.
MT40A4G8NEA-062E:F by Micron Technology

MT40A4G8NEA-062E:F

Micron Technology

MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.
MT47H128M16RT-25E:C by Micron Technology

MT47H128M16RT-25E:C

Micron Technology

MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
K4H561638N-LCB3 by Samsung

K4H561638N-LCB3

Samsung

Samsung's K4H561638N-LCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.