Micron Technology - MT4KTF25664AZ-1G6P1

  1. Home
  2. Micron Technology - MT4KTF25664AZ-1G6P1
MT4KTF25664AZ-1G6P1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT4KTF25664AZ-1G6P1
Description DDR3L DRAM MODULE;
Datasheet MT4KTF25664AZ-1G6P1 Datasheet
In Stock776
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
776 - -

Popular Products

Category Top Products

K4S281632K-UC60 by Samsung

K4S281632K-UC60

Samsung

Samsung's K4S281632K-UC60 is a 8MX16 DRAM with 200 MHz clock frequency. It operates synchronously at 3.3V, featuring 70°C max temp. Ideal for applications requiring high-speed memory access and low power consumption.
M393A2K43DB3-CWE by Samsung

M393A2K43DB3-CWE

Samsung

Samsung M393A2K43DB3-CWE DDR4 DRAM Module features 16GX8 organization, 1.2V supply voltage, and 137438953472-bit memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst access mode.
MT46V16M16P-5BIT by Micron Technology

MT46V16M16P-5BIT

Micron Technology

Micron Technology's MT46V16M16P-5BIT is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features a small outline package, common I/O type, and self-refresh mode. Ideal for industrial applications requiring high memory density and fast access times.
MT46H32M16LFBF-6IT:BTR by Micron Technology

MT46H32M16LFBF-6IT:BTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:BTR is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. It operates synchronously at a max temperature of 85°C and is ideal for industrial applications requiring fast access times and low power consumption.
MT48LC8M16A2TG-75IT:G by Micron Technology

MT48LC8M16A2TG-75IT:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:G is a 3.3V, 8MX16 Synchronous DRAM with 133MHz clock frequency and -40 to 85°C operating range. Ideal for industrial applications, it features a small outline package, common I/O type, and self-refresh capability.
AS4C256M16D3C-12BINTR by Alliance Memory

AS4C256M16D3C-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
K4S641632C-TC1L by Samsung

K4S641632C-TC1L

Samsung

Samsung's K4S641632C-TC1L is a 4MX16 DRAM with 3.3V supply, operating at 100MHz clock frequency. Ideal for commercial applications, it features synchronous operation, self-refresh capability, and a small outline package style.
S70KS1282GABHB033 by Cypress Semiconductor

S70KS1282GABHB033

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit; Maximum Standby Current: .0005 Amp;
AS4C512M8D4-83BCN by Alliance Memory

AS4C512M8D4-83BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
IS42S16160J-7TLI by Integrated Silicon Solution

IS42S16160J-7TLI

Integrated Silicon Solution

IS42S16160J-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. Ideal for industrial applications requiring fast access time of 5.4 ns and self-refresh capability in a small outline package.
AS4C512M16D3LC-12BINTR by Alliance Memory

AS4C512M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a package style of GRID ARRAY for applications requiring high-speed memory in compact form factors.
K4M281633H-BN75 by Samsung

K4M281633H-BN75

Samsung

Samsung's K4M281633H-BN75 DRAM features 8MX16 organization, 16-bit memory width, and 133 MHz clock frequency. Ideal for applications requiring high-speed data processing with a max operating temperature of 85°C. The package style is grid array with fine pitch, making it suitable for compact electronic devices.
IS42S16320D-7TLI by Integrated Silicon Solution

IS42S16320D-7TLI

Integrated Silicon Solution

IS42S16320D-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring fast access time of 5.4ns and memory density of 536MB in a small outline package.
IS43TR16256AL-125KBL by Integrated Silicon Solution

IS43TR16256AL-125KBL

Integrated Silicon Solution

IS43TR16256AL-125KBL by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast access times in a compact grid array package.
MT48LC16M16A2P-6AIT:GTR by Micron Technology

MT48LC16M16A2P-6AIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
MT60B2G8HB-48B:A by Micron Technology

MT60B2G8HB-48B:A

Micron Technology

Micron Technology's MT60B2G8HB-48B:A is a DDR5 DRAM with 2GX8 organization, operating at up to 2403.8 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
AS4C256M16D4-83BIN by Alliance Memory

AS4C256M16D4-83BIN

Alliance Memory

Alliance Memory's AS4C256M16D4-83BIN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply. Ideal for industrial applications requiring high memory density and fast data access in thin profile devices.
S27KS0642GABHI023 by Cypress Semiconductor

S27KS0642GABHI023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Length: 8 mm; No. of Ports: 1;
MT46V16M16P-6TIT:F by Micron Technology

MT46V16M16P-6TIT:F

Micron Technology

Micron Technology's MT46V16M16P-6TIT:F is a DDR1 DRAM with 16MX16 organization, operating at 167 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.