Micron Technology - MT4LSY6472T2G10LP

  1. Home
  2. Micron Technology - MT4LSY6472T2G10LP
MT4LSY6472T2G10LP by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT4LSY6472T2G10LP
Description Other Memory ICs;
Datasheet MT4LSY6472T2G10LP Datasheet
In Stock116
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
116 - -

Popular Products

Category Top Products

C1702A by Intel

C1702A

Intel

The Intel C1702A is a 256x8 MOS memory IC with 3-STATE output. It features a max access time of 1000ns and operates b/w 0°C to 70°C. Commonly used in commercial applications, this IC has a package style of IN-LINE and offers a memory density of 2048 bits.
TMS27PC32-150JL by Texas Instruments

TMS27PC32-150JL

Texas Instruments

Other Memory ICs;
M36LLR8860D1ZAQE by STMicroelectronics

M36LLR8860D1ZAQE

STMicroelectronics

M36LLR8860D1ZAQE by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM. It operates at 1.8V with a max temp of 85 °C and includes 88 terminals in a compact grid array package. Ideal for high-performance applications requiring efficient data storage.
TMS2758JDL-0 by Texas Instruments

TMS2758JDL-0

Texas Instruments

TMS2758JDL-0 by Texas Instruments is a 1Kx8 MOS memory IC with 8192-bit density and 450ns access time. It features 3-STATE output characteristics, operates b/w 0°C to 70°C, and has a rectangular ceramic package. Ideal for applications requiring common I/O type in commercial-grade environments.
THGBMDG5D1LBAIT by Toshiba

THGBMDG5D1LBAIT

Toshiba

The Toshiba THGBMDG5D1LBAIT is a 4GX8 memory IC with 34359738368-bit density and CMOS technology. It features a rectangular GRID ARRAY package with 153 terminals, suitable for applications requiring high memory capacity and efficient data processing in devices operating b/w -25°C to 85°C.
TMS4C1070-60SD by Texas Instruments

TMS4C1070-60SD

Texas Instruments

TMS4C1070-60SD by Texas Instruments is a 20-terminal memory IC with 5V supply voltage. It operates b/w 0 to 70°C, consuming a max of 35mA current. Ideal for commercial applications requiring fast access time of 50ns in a rectangular plastic package.
M36W108B120ZN6T by STMicroelectronics

M36W108B120ZN6T

STMicroelectronics

M36W108B120ZN6T by STMicroelectronics is a 1MX8 memory IC with 8388608 bit memory density. It operates in asynchronous mode with CMOS technology, suitable for industrial applications. This rectangular package has 48 terminals, measures 11.8mm x 9.8mm, and supports supply voltage from 2.7V to 3.6V.
M36P0R8070E0ZACE by STMicroelectronics

M36P0R8070E0ZACE

STMicroelectronics

M36P0R8070E0ZACE by STMicroelectronics is a synchronous memory IC featuring a mixed FLASH+PSRAM configuration with 16M words and a density of 268M bits. It operates at a nominal voltage of 1.8V, suitable for compact applications. Its thin profile and grid array design make it ideal for space-constrained devices.
MR10Q010SCR by Everspin Technologies

MR10Q010SCR

Everspin Technologies

Everspin Technologies' MR10Q010SCR is a 128KX8 MEMORY CIRCUIT IC with 1048576 bit Memory Density. Operating at 3.3V, it features SYNCHRONOUS mode and has a small outline package style. Ideal for applications requiring high-speed memory access in commercial temperature environments.
TMS27C32-15NE4 by Texas Instruments

TMS27C32-15NE4

Texas Instruments

Other Memory ICs;
M36W108B120ZM5T by STMicroelectronics

M36W108B120ZM5T

STMicroelectronics

STMicroelectronics M36W108B120ZM5T is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. It operates in asynchronous mode, has a CMOS technology, and supports a supply voltage range of 2.7V to 3.6V. This low-profile grid array package is suitable for various applications requiring high-density memory solutions.
M36W0R6030T0ZAQ by STMicroelectronics

M36W0R6030T0ZAQ

STMicroelectronics

M36W0R6030T0ZAQ by STMicroelectronics is a mixed memory IC featuring 4M x 16 organization, operating at 1.8V with a max temp of 85 °C. It supports asynchronous mode and offers high density (64Mb) for industrial applications. Ideal for compact, efficient designs due to its thin profile and low power consumption.
TMX27PC256N30 by Texas Instruments

TMX27PC256N30

Texas Instruments

Other Memory ICs;
M36W216B100ZA1T by STMicroelectronics

M36W216B100ZA1T

STMicroelectronics

M36W216B100ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -40 °C to 70 °C. Ideal for compact applications, it offers high density with 16Mbit storage in a 66-terminal grid array package.
ST25DV04K-JFR6D3 by STMicroelectronics

ST25DV04K-JFR6D3

STMicroelectronics

ST25DV04K-JFR6D3 by STMicroelectronics is a 4Kx1 memory circuit with 4096-bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85°C and comes in a small outline package for industrial applications. With synchronous operation and no-lead terminals, it is suitable for various IoT and RFID systems.
TMS44C250-12DZ by Texas Instruments

TMS44C250-12DZ

Texas Instruments

TMS44C250-12DZ by Texas Instruments is a 256KX4 MEMORY CIRCUIT IC with 1048576 bit Memory Density. It operates at 5V, has a Max Access Time of 120ns, and supports Commercial Temperature Grade. This SMALL OUTLINE package is ideal for applications requiring fast memory access in commercial-grade electronic devices.
SN74LS600ADW by Texas Instruments

SN74LS600ADW

Texas Instruments

SN74LS600ADW by Texas Instruments is a 16KX1 memory circuit IC with TTL technology. Operating at 5V, it has 16384-bit memory density and functions in asynchronous mode. This small outline package is ideal for applications requiring reliable memory storage in commercial temperature environments.
TMS2758JDL-1 by Texas Instruments

TMS2758JDL-1

Texas Instruments

TMS2758JDL-1 by Texas Instruments is a 1Kx8 memory IC with 8192-bit density and 450ns access time. It features 3-STATE output characteristics, operates b/w 0°C to 70°C, and has a rectangular ceramic package. Ideal for applications requiring common I/O type in commercial-grade environments.
WSF512K16-39H2I by Microsemi

WSF512K16-39H2I

Microsemi

Microsemi's WSF512K16-39H2I is a 512Kx16 memory IC with CMOS technology. Operating at 5V, it has a temperature range of -40 to 85°C and a package style of grid array. With 524288 words and 8388608 bits, it is ideal for industrial applications requiring high memory density and asynchronous operation.
DS2502P-E48 by Dallas Semiconductor

DS2502P-E48

Dallas Semiconductor

Other Memory ICs;