Micron Technology - MT4LSY6472T6G6LP

  1. Home
  2. Micron Technology - MT4LSY6472T6G6LP
MT4LSY6472T6G6LP by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT4LSY6472T6G6LP
Description Other Memory ICs;
Datasheet MT4LSY6472T6G6LP Datasheet
In Stock134
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
134 - -

Popular Products

Category Top Products

M36W108B120ZN5T by STMicroelectronics

M36W108B120ZN5T

STMicroelectronics

STMicroelectronics M36W108B120ZN5T is a 1MX8 memory IC with 8388608 bit memory density. It operates in asynchronous mode, with a supply voltage range of 2.7V to 3.6V. This GRID ARRAY package is suitable for applications requiring high memory capacity and low profile design.
MB85RS256BPNF-G-JNE1 by Fujitsu

MB85RS256BPNF-G-JNE1

Fujitsu

Fujitsu's MB85RS256BPNF-G-JNE1 is a 262Kb memory IC with 32Kx8 organization, operating at 3.3V. It features synchronous operation, industrial temperature grade, and small outline package suitable for various applications requiring reliable non-volatile memory storage.
SMJ44C251-15MJD by Texas Instruments

SMJ44C251-15MJD

Texas Instruments

Other Memory ICs;
TMS27C32-150NL4 by Texas Instruments

TMS27C32-150NL4

Texas Instruments

Other Memory ICs;
FM31256-GTR by Infineon Technologies

FM31256-GTR

Infineon Technologies

FM31256-GTR by Infineon Technologies is a 32KX8 MEMORY CIRCUIT IC with 262144 bit Memory Density. Operating at 3V, it has a SYNCHRONOUS mode and 550 ns Max Access Time. This SMALL OUTLINE IC is ideal for industrial applications requiring reliable memory storage solutions.
DS6204 by Analog Devices

DS6204

Analog Devices

Analog Devices' DS6204 is a CMOS Memory Circuit with 256-bit memory density. It operates b/w 0 °C to 70°C, making it suitable for commercial applications. The IC has a rectangular shape with 5 terminals and is ideal for various other function memory tasks.
M36W216B100ZA1 by STMicroelectronics

M36W216B100ZA1

STMicroelectronics

M36W216B100ZA1 from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -40 °C to 70 °C, making it ideal for commercial applications in compact devices. With 1M words and a fine-pitch grid array, it's perfect for high-density memory needs.
M36W108B120ZM1 by STMicroelectronics

M36W108B120ZM1

STMicroelectronics

M36W108B120ZM1 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 8Mbit density with FLASH+SRAM technology. It operates b/w 2.7V and 3.6V, supports up to 70 °C, and has a max access time of 120ns. Ideal for applications requiring efficient data storage in compact designs.
TMS27C32-100NL by Texas Instruments

TMS27C32-100NL

Texas Instruments

Other Memory ICs;
SNC54AS870JT by Texas Instruments

SNC54AS870JT

Texas Instruments

SNC54AS870JT by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL memory IC with 24 terminals in an IN-LINE package. It operates b/w -55°C to 125°C, making it suitable for military applications requiring high temperature resilience and reliability. The CERAMIC package body material ensures durability in harsh environments.
SSDSA2BW160G301 by Intel

SSDSA2BW160G301

Intel

Intel's SSDSA2BW160G301 is a MICROELECTRONIC ASSEMBLY with 160GX8 organization, operating in ASYNCHRONOUS mode. It offers 171798691840 words capacity, 1374389534720 bit memory density, and CMOS technology. Ideal for commercial applications requiring high-speed data processing at temperatures ranging from 0 to 70 °C.
TMS27L08JL by Texas Instruments

TMS27L08JL

Texas Instruments

TMS27L08JL by Texas Instruments is a 1KX8 OTP ROM memory IC with 8192-bit density and 450ns access time. It operates b/w 0-70°C, featuring a 3-STATE output and MOS technology. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.
MR25H10MDF by Everspin Technologies

MR25H10MDF

Everspin Technologies

MR25H10MDF by Everspin Technologies is a 128Kx8 memory IC with CMOS technology. It operates synchronously at a nominal voltage of 3V, suitable for automotive applications. With a small outline package style and very thin profile, it offers high memory density of 1048576 bits for various electronic devices.
DS1207-G01 by Analog Devices

DS1207-G01

Analog Devices

DS1207-G01 by Analog Devices is a CMOS MEMORY CIRCUIT with 5 terminals. It operates SYNCHRONOUSLY at temperatures ranging from 0 °C to 70°C. This RECTANGULAR IC is ideal for commercial applications requiring special shape package styles.
DS2401P+T&R by Maxim Integrated

DS2401P+T&R

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Terminal Form: C BEND;
DS1996L-F5+ by Maxim Integrated

DS1996L-F5+

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Shape: ROUND; Maximum Operating Temperature: 70 Cel; No. of Functions: 1;
MR0A16ACYS35 by Everspin Technologies

MR0A16ACYS35

Everspin Technologies

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MB85RS4MTYPN-G-AWEWE1 by Fujitsu

MB85RS4MTYPN-G-AWEWE1

Fujitsu

Other Memory ICs; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 255; Maximum Time At Peak Reflow Temperature (s): 5;
TMS4C1050-60N by Texas Instruments

TMS4C1050-60N

Texas Instruments

TMS4C1050-60N by Texas Instruments is a 16-terminal MEMORY CIRCUIT IC with 5V supply, 50ns access time, and 35mA max supply current. It operates b/w 0-70°C in COMMERCIAL grade applications. Ideal for systems requiring fast memory access and low standby current consumption.
DS90922R-L00 by Analog Devices

DS90922R-L00

Analog Devices

DS90922R-L00 by Analog Devices is a CMOS MEMORY CIRCUIT with 2 terminals in a ROUND METAL package. It features TIN LEAD finish and THROUGH-HOLE terminal form. Ideal for applications requiring Other Function Memory ICs in CYLINDRICAL package style.