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| Manufacturer | Micron Technology |
|---|---|
| Manufacturer's Part Number | MT4LSYT6472B2G-9P |
| Description | SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 160; Package Shape: RECTANGULAR; Qualification: Not Qualified; Terminal Form: NO LEAD; |
| Datasheet | MT4LSYT6472B2G-9P Datasheet |
| In Stock | 808 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Organization: | 64KX72 |
| Output Characteristics: | 3-STATE |
| Minimum Supply Voltage (Vsup): | 3.135 V |
| Surface Mount: | NO |
| No. of Terminals: | 160 |
| No. of Words: | 65536 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | MICROELECTRONIC ASSEMBLY |
| Technology: | CMOS |
| JESD-30 Code: | R-XDMA-N160 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 70 Cel |
| No. of Ports: | 1 |
| Memory Density: | 4718592 bit |
| Memory IC Type: | SRAM MODULE |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 72 |
| Output Enable: | YES |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Maximum Access Time: | 9 ns |
| No. of Words Code: | 64K |
| Nominal Supply Voltage / Vsup (V): | 3.3 |
| Additional Features: | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
| Parallel or Serial: | PARALLEL |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 3.465 V |
