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| Manufacturer | Micron Technology |
|---|---|
| Manufacturer's Part Number | MT53B512M32D2NP-062WT:C |
| Description | DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 10 mm; Access Mode: DUAL BANK PAGE BURST; |
| Datasheet | MT53B512M32D2NP-062WT:C Datasheet |
| In Stock | 225 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 512MX32 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Maximum Seated Height: | .8 mm |
| Access Mode: | DUAL BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.06 V |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 200 |
| Maximum Clock Frequency (fCLK): | 1600 MHz |
| No. of Words: | 536870912 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B200 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | VFBGA |
| Width: | 10 mm |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 17179869184 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 16,32 |
| Memory IC Type: | DDR4 DRAM |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | -30 Cel |
| Memory Width: | 32 |
| No. of Functions: | 1 |
| Package Equivalence Code: | BGA200,12X22,32/25 |
| Interleaved Burst Length: | 16,32 |
| Length: | 14.5 mm |
| No. of Words Code: | 512M |
| Nominal Supply Voltage / Vsup (V): | 1.1 |
| Additional Features: | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | .8 mm |
| Maximum Supply Voltage (Vsup): | 1.17 V |
