Micron Technology - MT53D1024M32D4DT-053AAT:DTR

  1. Home
  2. Micron Technology - MT53D1024M32D4DT-053AAT:DTR
MT53D1024M32D4DT-053AAT:DTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT53D1024M32D4DT-053AAT:DTR
Description DDR4 DRAM; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
In Stock1,028
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Memory IC Type: DDR4 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,028 - -

Popular Products

Category Top Products

S27KL0642DPBHB023 by Infineon Technologies

S27KL0642DPBHB023

Infineon Technologies

Infineon's S27KL0642DPBHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for applications requiring high-speed data processing and storage in automotive electronics, IoT devices, and industrial control systems.
MT53E256M16D1DS-046AAT:B by Micron Technology

MT53E256M16D1DS-046AAT:B

Micron Technology

Micron Technology's MT53E256M16D1DS-046AAT:B is a LPDDR4 DRAM with 256MX16 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.
MT46H32M16LFBF-6IT:CTR by Micron Technology

MT46H32M16LFBF-6IT:CTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT48LC16M16A2P-6AIT by Micron Technology

MT48LC16M16A2P-6AIT

Micron Technology

MT48LC16M16A2P-6AIT by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact package with common I/O type and self-refresh capability.
IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.
S27KL0642GABHB023 by Cypress Semiconductor

S27KL0642GABHB023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Organization: 8MX8;
MT47H64M16HR-3IT:HTR by Micron Technology

MT47H64M16HR-3IT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-3IT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access times in industrial environments.
AS4C16M16SA-6TINTR by Alliance Memory

AS4C16M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C16M16SA-6TINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, ideal for industrial applications. Features include 3.3V supply voltage, 85°C operating temperature, and common I/O type. Suitable for systems requiring high-speed memory access in compact form factors.
S27KS0642GABHB020 by Cypress Semiconductor

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
IS42S32800J-7BL by Integrated Silicon Solution

IS42S32800J-7BL

Integrated Silicon Solution

IS42S32800J-7BL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 143 MHz clock frequency. Featuring a 268MB memory density, it operates at 3.3V and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT48LC4M32B2P-7:GTR by Micron Technology

MT48LC4M32B2P-7:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.
M378B5673EH1-CF8 by Samsung

M378B5673EH1-CF8

Samsung

Samsung M378B5673EH1-CF8 DDR DRAM Module has 256MX64 organization, operates at 533 MHz with 3-STATE output. Ideal for high-performance computing applications due to its synchronous operation and dual bank page burst access mode.
IS42S16160G-7BLI-TR by Integrated Silicon Solution

IS42S16160G-7BLI-TR

Integrated Silicon Solution

IS42S16160G-7BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for industrial applications, it features a thin profile grid array package and supports common I/O type with self-refresh capability.
MT40A1G16KH-062EAAT:E by Micron Technology

MT40A1G16KH-062EAAT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).
MT40A1G16HBA-083E:A by Micron Technology

MT40A1G16HBA-083E:A

Micron Technology

Micron Technology's MT40A1G16HBA-083E:A is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
IS42S16160J-7TLI by Integrated Silicon Solution

IS42S16160J-7TLI

Integrated Silicon Solution

IS42S16160J-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. Ideal for industrial applications requiring fast access time of 5.4 ns and self-refresh capability in a small outline package.
IS43QR16256B-083RBLI by Integrated Silicon Solution

IS43QR16256B-083RBLI

Integrated Silicon Solution

IS43QR16256B-083RBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
K4S561632N-LI75 by Samsung

K4S561632N-LI75

Samsung

Samsung's K4S561632N-LI75 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times.
W958D8NBYA5I by Winbond Electronics

W958D8NBYA5I

Winbond Electronics

Winbond Electronics' W958D8NBYA5I is a 32MX8 DRAM with 268MB memory density. Operating at 200MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices with limited power consumption.
W631GU6NB09I by Winbond Electronics

W631GU6NB09I

Winbond Electronics

Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.