Micron Technology - MT53E256M32D2FW-046WT:B

  1. Home
  2. Micron Technology - MT53E256M32D2FW-046WT:B
MT53E256M32D2FW-046WT:B by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT53E256M32D2FW-046WT:B
Description LPDDR4 DRAM;
Datasheet MT53E256M32D2FW-046WT:B Datasheet
In Stock2,363
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,363 $8.630 $20,392.690

Popular Products

Category Top Products

MT53E256M32D2DS-046AIT:B by Micron Technology

MT53E256M32D2DS-046AIT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AIT:B is a 256MX32 LPDDR4 DRAM with a max clock frequency of 2133 MHz. It operates in synchronous mode, has a self-refresh feature, and is commonly used in automotive applications due to its AEC-Q100 screening level.
MT41K128M16JT-107:K by Micron Technology

MT41K128M16JT-107:K

Micron Technology

Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.
TC514400AP-70 by Toshiba

TC514400AP-70

Toshiba

Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.
MT40A1G8WE-083EAIT:B by Micron Technology

MT40A1G8WE-083EAIT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
MT40A2G4SA-062E:E by Micron Technology

MT40A2G4SA-062E:E

Micron Technology

Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
MT40A1G8SA-062EIT:E by Micron Technology

MT40A1G8SA-062EIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EIT:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for industrial applications with a temperature range of -40 to 95°C, it offers high memory density of 8589934592 bits and supports multi-bank page burst access mode.
K4S561632E-TC75T by Samsung

K4S561632E-TC75T

Samsung

Samsung's K4S561632E-TC75T is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for commercial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.
AS4C512M16D3LA-10BCNTR by Alliance Memory

AS4C512M16D3LA-10BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.
MT41K256M16TW-107IT:P by Micron Technology

MT41K256M16TW-107IT:P

Micron Technology

Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
MT48LC4M32B2P-6AAAT:L by Micron Technology

MT48LC4M32B2P-6AAAT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.
IS43TR16256BL-125KBLI by Integrated Silicon Solution

IS43TR16256BL-125KBLI

Integrated Silicon Solution

IS43TR16256BL-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a self-refresh feature. It is commonly used in industrial applications requiring high memory density and fast data processing.
MT48LC16M16A2P-7EIT:G by Micron Technology

MT48LC16M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access in harsh environments.
MT46V16M16P-5B:M by Micron Technology

MT46V16M16P-5B:M

Micron Technology

Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
AS4C512M8D4-83BIN by Alliance Memory

AS4C512M8D4-83BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT53E512M32D1ZW-046AAT:B by Micron Technology

MT53E512M32D1ZW-046AAT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046AAT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
HYB25D512160BE-6 by Infineon Technologies

HYB25D512160BE-6

Infineon Technologies

HYB25D512160BE-6 by Infineon Technologies is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates at a max clock frequency of 166 MHz and has a memory density of 536870912 bits. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT41K128M16JT-107:KTR by Micron Technology

MT41K128M16JT-107:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption.
AS4C64M16D2A-25BINTR by Alliance Memory

AS4C64M16D2A-25BINTR

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BINTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, operating at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package style.
MT48LC32M16A2TG-75L:C by Micron Technology

MT48LC32M16A2TG-75L:C

Micron Technology

Micron Technology's MT48LC32M16A2TG-75L:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT48LC16M16A2P-7EAIT:G by Micron Technology

MT48LC16M16A2P-7EAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7EAIT:G is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, four bank page burst access, and offers 268MB memory density. Ideal for industrial applications requiring fast data processing in compact systems.