Micron Technology - MT53E768M32D2ZW-046AIT:C

  1. Home
  2. Micron Technology - MT53E768M32D2ZW-046AIT:C
MT53E768M32D2ZW-046AIT:C by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT53E768M32D2ZW-046AIT:C
Description LPDDR4 DRAM;
Datasheet MT53E768M32D2ZW-046AIT:C Datasheet
In Stock1,745
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,745 $24.540 $42,822.300

Popular Products

Category Top Products

MT53E768M32D4DE-046AAT:E by Micron Technology

MT53E768M32D4DE-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.
MT46H32M16LFBF-6AAT:C by Micron Technology

MT46H32M16LFBF-6AAT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AAT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. It operates at 166 MHz, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.
MT4C4001JDJ-6 by Micron Technology

MT4C4001JDJ-6

Micron Technology

Micron Technology's MT4C4001JDJ-6 is a 1MX4 DRAM with 1048576 words, 60ns access time, and 4194304-bit memory density. It is used in fast page applications requiring common I/O type and operates at a nominal voltage of 5V.
MT41K512M16VRN-107AIT:PTR by Micron Technology

MT41K512M16VRN-107AIT:PTR

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.
MT40A512M8SA-062EAAT:F by Micron Technology

MT40A512M8SA-062EAAT:F

Micron Technology

Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.
EDB4432BBBJ-1DAUT-F-R by Micron Technology

EDB4432BBBJ-1DAUT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for automotive applications due to its very thin profile, fine pitch grid array package style.
IS42S16160J-6BLI by Integrated Silicon Solution

IS42S16160J-6BLI

Integrated Silicon Solution

IS42S16160J-6BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance in a compact grid array package.
K4T51163QG-HCE6 by Samsung

K4T51163QG-HCE6

Samsung

Samsung's K4T51163QG-HCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 1.8V supply voltage. Ideal for high-performance applications requiring fast data processing and storage with a memory density of 536870912 bits.
MT48LC16M16A2BG-75IT:DTR by Micron Technology

MT48LC16M16A2BG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2BG-75IT:DTR is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory with low power consumption.
W956D8MBYA5I by Winbond Electronics

W956D8MBYA5I

Winbond Electronics

W956D8MBYA5I by Winbond Electronics is an 8MX8 DRAM with a memory density of 67108864 bit. It operates at a max clock frequency of 200 MHz and has a self-refresh feature. This HYPERRAM is suitable for applications requiring high-speed synchronous memory with low power consumption.
D2516ECMDXGJD-U by Kingston Technology Company

D2516ECMDXGJD-U

Kingston Technology Company

Kingston's D2516ECMDXGJD-U DDR3L DRAM features 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for applications requiring high memory density and synchronous operation in a grid array package with self-refresh capability.
IS42VS16160J-75TLI by Integrated Silicon Solution

IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.
MT47H64M16NF-25EAAT:M by Micron Technology

MT47H64M16NF-25EAAT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EAAT:M is a DDR2 DRAM with 64MX16 organization, operating at a max clock frequency of 400 MHz. It has a memory density of 1,073,741,824 bits and is commonly used in applications requiring high-speed synchronous memory.
IS43TR16256BL-125KBLI by Integrated Silicon Solution

IS43TR16256BL-125KBLI

Integrated Silicon Solution

IS43TR16256BL-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a self-refresh feature. It is commonly used in industrial applications requiring high memory density and fast data processing.
AS4C512M8D4-83BCN by Alliance Memory

AS4C512M8D4-83BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
MT4C4M4B1DJ-6 by Micron Technology

MT4C4M4B1DJ-6

Micron Technology

MT4C4M4B1DJ-6 by Micron Technology is a 4MX4 DRAM with 3-STATE output, operating at 5V. It features a small outline package, synchronous mode, and fast page access. Ideal for commercial applications requiring high memory density and fast data retrieval within temperature range of 0 to 70°C.
MT46V16M16P-5BAIT:M by Micron Technology

MT46V16M16P-5BAIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BAIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC16M16A2P-7EIT:DTR by Micron Technology

MT48LC16M16A2P-7EIT:DTR

Micron Technology

MT48LC16M16A2P-7EIT:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is ideal for industrial applications requiring fast and reliable memory performance.
IS42S16800F-7TLI-TR by Integrated Silicon Solution

IS42S16800F-7TLI-TR

Integrated Silicon Solution

IS42S16800F-7TLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times.
MT40A2G8JE-062EAAT:E by Micron Technology

MT40A2G8JE-062EAAT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.