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| Manufacturer | Micron Technology |
|---|---|
| Manufacturer's Part Number | MT54V512H18EF-6 |
| Description | QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e0; |
| Datasheet | MT54V512H18EF-6 Datasheet |
| In Stock | 2,234 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .17 Amp |
| Organization: | 512KX18 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.2 mm |
| Minimum Supply Voltage (Vsup): | 2.4 V |
| Sub-Category: | SRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 350 mA |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 165 |
| Maximum Clock Frequency (fCLK): | 167 MHz |
| No. of Words: | 524288 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B165 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 70 Cel |
| Package Code: | TBGA |
| Width: | 13 mm |
| Input/Output Type: | SEPARATE |
| No. of Ports: | 2 |
| Memory Density: | 9437184 bit |
| Minimum Standby Voltage: | 2.4 V |
| Memory IC Type: | QDR SRAM |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 18 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA165,11X15,40 |
| Length: | 15 mm |
| Maximum Access Time: | 2.5 ns |
| No. of Words Code: | 512K |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | PIPELINED ARCHITECTURE |
| Parallel or Serial: | PARALLEL |
| Terminal Pitch: | 1 mm |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 2.6 V |
| Power Supplies (V): | 1.5,2.5 |
