MT54V512H36EF-10 by Micron Technology | Memory ICs

Image shown is a representation only.

Manufacturer	Micron Technology
Manufacturer's Part Number	MT54V512H36EF-10
Description	QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: TBGA; Package Shape: RECTANGULAR; Technology: CMOS;
Datasheet	MT54V512H36EF-10 Datasheet
In Stock	1,173

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.12 Amp
Organization:	512KX36
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Minimum Supply Voltage (Vsup):	2.4 V
Sub-Category:	SRAMs
Surface Mount:	YES
Maximum Supply Current:	260 mA
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	165
Maximum Clock Frequency (fCLK):	100 MHz
No. of Words:	524288 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PBGA-B165
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	TBGA
Width:	13 mm
Input/Output Type:	SEPARATE
Memory Density:	18874368 bit
Minimum Standby Voltage:	2.4 V
Memory IC Type:	QDR SRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	36
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA165,11X15,40
Length:	15 mm
Maximum Access Time:	3 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	2.5
Additional Features:	PIPELINED ARCHITECTURE
Parallel or Serial:	PARALLEL
Terminal Pitch:	1 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	2.6 V
Power Supplies (V):	1.5/1.8,2.5

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,173	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;