Micron Technology - MT58L256L18F1T-8.5ITTR

  1. Home
  2. Micron Technology - MT58L256L18F1T-8.5ITTR
MT58L256L18F1T-8.5ITTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT58L256L18F1T-8.5ITTR
Description CACHE SRAM;
Datasheet MT58L256L18F1T-8.5ITTR Datasheet
In Stock100
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
100 $5.200 $520.000

Popular Products

Category Top Products

2606B by Philips Semiconductors

2606B

Philips Semiconductors

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
CY14B116L-ZS25XIT by Infineon Technologies

CY14B116L-ZS25XIT

Infineon Technologies

Infineon's CY14B116L-ZS25XIT is a 2MX8 SRAM with 16777216-bit memory density, operating at 3V. It features an access time of 25ns and is ideal for industrial applications requiring non-volatile memory storage in a small outline package.
AS6C4008-55SINTR by Alliance Memory

AS6C4008-55SINTR

Alliance Memory

Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.
CY62167EV30LL-45BVXI by Cypress Semiconductor

CY62167EV30LL-45BVXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.5 V;
CY14B256LA-SZ45XIT by Infineon Technologies

CY14B256LA-SZ45XIT

Infineon Technologies

Infineon's CY14B256LA-SZ45XIT is a 32Kx8 non-volatile SRAM with 262144-bit memory density. Operating at 3V, it offers fast access time of 45ns and low standby current of 0.005A. Ideal for industrial applications requiring reliable data storage in a compact package.
RMLV1616AGBG-5S2#AC0 by Renesas Electronics

RMLV1616AGBG-5S2#AC0

Renesas Electronics

Renesas Electronics RMLV1616AGBG-5S2#AC0 is a 1MX16 SRAM with 55ns access time, operating at 3.6V max voltage. Suitable for industrial applications, it features common I/O type and parallel interface, packaged in plastic/epoxy with grid array style.
MT58L64L18FT-8.5 by Cypress Semiconductor

MT58L64L18FT-8.5

Cypress Semiconductor

Cypress Semiconductor's MT58L64L18FT-8.5 is a 64KX18 CACHE SRAM with 1179648 bit memory density and 8.5 ns max access time. Operating at 3.3V, it is ideal for synchronous applications requiring fast data retrieval in commercial temperature environments.
CY62148ESL-55ZAXIT by Infineon Technologies

CY62148ESL-55ZAXIT

Infineon Technologies

Infineon's CY62148ESL-55ZAXIT is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. It features common I/O type, 3-state output characteristics, and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
M48Z12-70PC1 by STMicroelectronics

M48Z12-70PC1

STMicroelectronics

M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.
71V124SA12TYGI by Integrated Device Technology

71V124SA12TYGI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: SOJ; Package Shape: RECTANGULAR; Surface Mount: YES;
AS6C1008-55SIN by Alliance Memory

AS6C1008-55SIN

Alliance Memory

Alliance Memory's AS6C1008-55SIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features asynchronous operation, common I/O type, and 3-state output characteristics. This small outline package offers high memory density and low standby current for efficient performance in various electronic devices.
IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.
CY62146EV30LL-45ZSXIT by Cypress Semiconductor

CY62146EV30LL-45ZSXIT

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Standby Current: .000007 Amp;
DS1225Y-150 by Dallas Semiconductor

DS1225Y-150

Dallas Semiconductor

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;
5962-8685904LA by Performance Semiconductor

5962-8685904LA

Performance Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, GLASS-SEALED;
CY62177EV30LL-55ZXI by Infineon Technologies

CY62177EV30LL-55ZXI

Infineon Technologies

Infineon's CY62177EV30LL-55ZXI is a 2MX16 SRAM with 3.3V supply, 55ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable data storage in a compact package.
70V3399S133BFI8 by Integrated Device Technology

70V3399S133BFI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: LFBGA; Package Shape: SQUARE; Width: 15 mm;
BS62LV256SIP55 by Brilliance Semiconductor

BS62LV256SIP55

Brilliance Semiconductor

BS62LV256SIP55 by Brilliance Semiconductor is a 32KX8 SRAM with 262144 bit memory density. Operating at 5V, it has a max access time of 55ns and operates in industrial temperature range. Ideal for applications requiring fast, asynchronous data storage with parallel interface.
IDT71V416S15PHGI8 by Renesas Electronics

IDT71V416S15PHGI8

Renesas Electronics

The Renesas Electronics IDT71V416S15PHGI8 is a 256Kx16 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 15ns and offers 262144 words of memory. Ideal for industrial applications requiring fast and reliable data storage with a compact small outline thin profile package style.
71024S15TYG by Integrated Device Technology

71024S15TYG

Integrated Device Technology

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: SOJ; Package Shape: RECTANGULAR; Width: 7.62 mm;