Micron Technology - MT5C1001F25P/883C

  1. Home
  2. Micron Technology - MT5C1001F25P/883C
MT5C1001F25P/883C by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT5C1001F25P/883C
Description STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 32; Package Code: DFP; Package Shape: RECTANGULAR; No. of Words Code: 1M;
Datasheet MT5C1001F25P/883C Datasheet
In Stock997
NAME DESCRIPTION
Package Body Material: CERAMIC
Maximum Standby Current: .01 Amp
Organization: 1MX1
Output Characteristics: 3-STATE
Sub-Category: SRAMs
Surface Mount: YES
Maximum Supply Current: 140 mA
No. of Terminals: 32
No. of Words: 1048576 words
Terminal Position: DUAL
Package Style (Meter): FLATPACK
Screening Level: 38535Q/M;38534H;883B
Technology: CMOS
JESD-30 Code: R-XDFP-F32
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 125 Cel
Package Code: DFP
Input/Output Type: SEPARATE
Memory Density: 1048576 bit
Minimum Standby Voltage: 4.5 V
Memory IC Type: STANDARD SRAM
Minimum Operating Temperature: -55 Cel
Memory Width: 1
Qualification: Not Qualified
Package Equivalence Code: FL32,.4
Maximum Access Time: 25 ns
No. of Words Code: 1M
Nominal Supply Voltage / Vsup (V): 5
Parallel or Serial: PARALLEL
Terminal Pitch: 1.27 mm
Temperature Grade: MILITARY
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
997 - -

Popular Products

Category Top Products

23A640-I/P by Microchip Technology

23A640-I/P

Microchip Technology

23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.
CY7C028V-20AI by Cypress Semiconductor

CY7C028V-20AI

Cypress Semiconductor

CY7C028V-20AI by Cypress Semiconductor is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features asynchronous mode, common I/O type, and 20ns access time. Ideal for industrial applications requiring fast and reliable memory storage in a compact square package.
HM628512BLFP-7 by Renesas Electronics

HM628512BLFP-7

Renesas Electronics

Renesas Electronics' HM628512BLFP-7 is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features a small outline package, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast and reliable memory storage in electronic devices.
5962-8685910LA by Performance Semiconductor

5962-8685910LA

Performance Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Standby Current: .001 Amp;
CY7C1049G30-10ZSXIT by Infineon Technologies

CY7C1049G30-10ZSXIT

Infineon Technologies

CY7C1049G30-10ZSXIT by Infineon: 512KX8 SRAM, operates at 3V, with 10ns access time. Ideal for industrial applications requiring fast and reliable parallel memory storage.
CY7C1612KV18-250BZXI by Infineon Technologies

CY7C1612KV18-250BZXI

Infineon Technologies

Infineon Technologies' CY7C1612KV18-250BZXI is a QDR II SRAM with 8MX18 organization and 150994944-bit memory density. It operates at a max clock frequency of 250 MHz and has a low profile package style. This SRAM is suitable for industrial applications requiring high-speed synchronous memory.
AS6C1008-55SIN by Alliance Memory

AS6C1008-55SIN

Alliance Memory

Alliance Memory's AS6C1008-55SIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features asynchronous operation, common I/O type, and 3-state output characteristics. This small outline package offers high memory density and low standby current for efficient performance in various electronic devices.
DS1245Y-70IND by Maxim Integrated

DS1245Y-70IND

Maxim Integrated

DS1245Y-70IND by Maxim Integrated is a 128Kx8 SRAM with 70ns access time, operating at 5V. It is an industrial-grade non-volatile memory module suitable for applications requiring fast and reliable data storage in harsh environments. With a memory density of 1048576 bits, it offers parallel operation and low standby current of 0.005A.
5962-9461110HMA by White Microelectronics

5962-9461110HMA

White Microelectronics

SRAM MODULE; Temperature Grade: MILITARY; No. of Terminals: 68; Package Code: QFP; Package Shape: SQUARE; Memory Density: 16777216 bit;
CY62148ELL-45ZSXI by Rochester Electronics

CY62148ELL-45ZSXI

Rochester Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Finish: TIN;
5962-8685923YA by Integrated Device Technology

5962-8685923YA

Integrated Device Technology

OTHER SRAM; Temperature Grade: MILITARY; No. of Terminals: 22; Package Code: DIP; Package Shape: RECTANGULAR; Input/Output Type: COMMON;
5962-8685920YA by Matra Mhs

5962-8685920YA

Matra Mhs

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 22; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5; Parallel or Serial: PARALLEL;
71256SA20PZGI8 by Renesas Electronics

71256SA20PZGI8

Renesas Electronics

STANDARD SRAM; Terminal Finish: Matte Tin (Sn) - annealed; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
CY62167GE30-45ZXIT by Infineon Technologies

CY62167GE30-45ZXIT

Infineon Technologies

Infineon's CY62167GE30-45ZXIT is a 1MX16 SRAM with 45ns access time, operating at 3V. It features a small outline package and is ideal for industrial applications requiring high-speed parallel memory with 16-bit width. The device offers reliable performance in temperature ranges from -40°C to 85°C.
71V3576S150PFGI8 by Renesas Electronics

71V3576S150PFGI8

Renesas Electronics

The Renesas Electronics 71V3576S150PFGI8 is a synchronous SRAM with an organization of 128KX36 and a memory density of 4718592 bit. It operates at a max clock frequency of 150 MHz and has a min access time of 3.8 ns. This memory IC type is commonly used in cache applications.
CY62158EV30LL-45BVXI by Cypress Semiconductor

CY62158EV30LL-45BVXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;
IS61C256AL-12TLI by Integrated Silicon Solution

IS61C256AL-12TLI

Integrated Silicon Solution

IS61C256AL-12TLI by Integrated Silicon Solution is a 32KX8 SRAM with 12 ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.
5962-8685904LA by Pyramid Semiconductor

5962-8685904LA

Pyramid Semiconductor

OTHER SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Width: 7.62 mm;
CY62147EV30LL-45BVXI by Infineon Technologies

CY62147EV30LL-45BVXI

Infineon Technologies

CY62147EV30LL-45BVXI by Infineon Technologies is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and operates in industrial temperature range. It features a very thin profile grid array package suitable for applications requiring fast and reliable memory storage in harsh environments.
23A1024-I/ST by Microchip Technology

23A1024-I/ST

Microchip Technology

23A1024-I/ST by Microchip Technology is a 128Kx8 SRAM with 131072 words, operating at 1.8/2V. It has a max clock frequency of 20MHz and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring fast synchronous memory access in compact designs.