Micron Technology - MT5C1005S01AWX2-35

  1. Home
  2. Micron Technology - MT5C1005S01AWX2-35
MT5C1005S01AWX2-35 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT5C1005S01AWX2-35
Description Other Memory ICs;
Datasheet MT5C1005S01AWX2-35 Datasheet
In Stock627
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
627 - -

Popular Products

Category Top Products

TMS2716JL by Texas Instruments

TMS2716JL

Texas Instruments

TMS2716JL by Texas Instruments is a 2Kx8 MOS memory IC with 16384-bit density and 450ns access time. Featuring 3-STATE output, it operates b/w 0°C to 70°C. Ideal for commercial applications requiring fast data retrieval in a ceramic package with 24 terminals.
M36W108T100ZN1T by STMicroelectronics

M36W108T100ZN1T

STMicroelectronics

M36W108T100ZN1T by STMicroelectronics is a 1MX8 memory IC with 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and operates within a temperature range of 0 °C to 70°C. This rectangular package with grid array style is suitable for various commercial applications requiring high-density memory solutions.
TMS27PC32-25JE by Texas Instruments

TMS27PC32-25JE

Texas Instruments

Other Memory ICs;
M27C512 by Koa Speer Electronics

M27C512

Koa Speer Electronics

Other Memory ICs;
TMS4C2973-28DT by Texas Instruments

TMS4C2973-28DT

Texas Instruments

TMS4C2973-28DT by Texas Instruments is a 36-terminal memory IC with 3.3V supply, operating b/w 0-70°C. It features a max access time of 23ns and standby current of 0.01A, suitable for commercial applications requiring fast data retrieval in small outline packages.
DS2411X by Maxim Integrated

DS2411X

Maxim Integrated

DS2411X by Maxim Integrated is a 64-bit MEMORY CIRCUIT with 64x1 organization. It operates in ASYNCHRONOUS mode, with power supplies of 2/5V. This PLASTIC/EPOXY IC, in GRID ARRAY package style, is ideal for industrial applications requiring low standby current and fine pitch terminals.
TMS4C1050-3N by Texas Instruments

TMS4C1050-3N

Texas Instruments

TMS4C1050-3N by Texas Instruments is a CMOS MEMORY CIRCUIT IC with 16 terminals, operating at 5V. It has a max access time of 25ns and standby current of 0.005A. This IN-LINE package is ideal for commercial applications requiring reliable memory functionality in the temperature range of 0 to 70°C.
SN74170N1 by Texas Instruments

SN74170N1

Texas Instruments

SN74170N1 by Texas Instruments is a TTL technology IC with 16 terminals, operating at 5V. It has a rectangular package shape made of PLASTIC/EPOXY material. This IC is commonly used in memory applications due to its commercial temperature grade and through-hole terminal form.
47C04T-I/SN by Microchip Technology

47C04T-I/SN

Microchip Technology

47C04T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a memory density of 4096 bit and max access time of 400ns. This small outline package is ideal for industrial applications requiring reliable non-volatile memory storage.
M36W0R6040B0ZAQF by STMicroelectronics

M36W0R6040B0ZAQF

STMicroelectronics

M36W0R6040B0ZAQF from STMicroelectronics is a mixed memory IC featuring 4M x 16 organization with Flash+PSRAM technology. It operates asynchronously at a nominal voltage of 1.8V, supporting temperatures from -30 °C to 85 °C. Ideal for compact applications, it has a thin profile grid array package with low power consumption.
DS28E80Q+UW by Analog Devices

DS28E80Q+UW

Analog Devices

MEMORY CIRCUIT;
M36W216TI70ZA6 by STMicroelectronics

M36W216TI70ZA6

STMicroelectronics

M36W216TI70ZA6 by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with mixed FLASH+SRAM technology. It operates b/w -40 °C to 85 °C and supports a supply voltage of 2.7V to 3.3V. Ideal for industrial applications requiring compact, reliable memory solutions.
MR2A16AMYS35R by Everspin Technologies

MR2A16AMYS35R

Everspin Technologies

MR2A16AMYS35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. Operating at 3.3V, it has a temperature range of -40 to 125°C and is AEC-Q100 compliant for automotive applications. This small outline, thin profile package with 44 terminals is ideal for high-performance asynchronous memory needs in automotive electronics.
TMX27PC256N25 by Texas Instruments

TMX27PC256N25

Texas Instruments

Other Memory ICs;
M36W0R5020T0ZAQT by STMicroelectronics

M36W0R5020T0ZAQT

STMicroelectronics

M36W0R5020T0ZAQT by STMicroelectronics is a versatile memory IC featuring 2M words of mixed FLASH+SRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. Its compact design (8x10 mm) ensures efficient space utilization in electronic devices.
M36W108B120ZM5T by STMicroelectronics

M36W108B120ZM5T

STMicroelectronics

STMicroelectronics M36W108B120ZM5T is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. It operates in asynchronous mode, has a CMOS technology, and supports a supply voltage range of 2.7V to 3.6V. This low-profile grid array package is suitable for various applications requiring high-density memory solutions.
LC331632M-10 by Onsemi

LC331632M-10

Onsemi

LC331632M-10 by Onsemi is a 32KX16 CMOS memory IC with 3-STATE output. It operates at a nominal voltage of 5V and has a memory density of 524288 bits. This small outline package is ideal for applications requiring common I/O type in commercial temperature grades.
M36W216BI85ZA6 by STMicroelectronics

M36W216BI85ZA6

STMicroelectronics

M36W216BI85ZA6 by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates b/w -40 °C to 85 °C and requires a supply voltage of 2.7V to 3.3V. Ideal for industrial applications, it offers efficient performance in compact designs.
SNC54170J by Texas Instruments

SNC54170J

Texas Instruments

SNC54170J by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL memory IC with 16 terminals and a supply voltage of 5V. It operates in temperatures ranging from -55°C to 125°C, making it suitable for military-grade applications requiring reliable performance in harsh environments. The ceramic package body material ensures durability and robustness for long-term use.
XC17S30PD8I by Xilinx

XC17S30PD8I

Xilinx

XC17S30PD8I by Xilinx is a 247968-bit MEMORY CIRCUIT with 3-STATE output characteristics. Operating at 10 MHz clock frequency, it has an industrial temperature grade and synchronous mode. Commonly used in applications requiring reliable memory storage and retrieval within the industrial sector.