Micron Technology - MT5C2516XWM1-35

  1. Home
  2. Micron Technology - MT5C2516XWM1-35
MT5C2516XWM1-35 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT5C2516XWM1-35
Description Other Memory ICs;
Datasheet MT5C2516XWM1-35 Datasheet
In Stock1,962
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,962 - -

Popular Products

Category Top Products

DS6204U-XXX by Analog Devices

DS6204U-XXX

Analog Devices

DS6204U-XXX by Analog Devices is a 128x1 memory circuit IC with synchronous operation. Featuring CMOS technology, it has 128-bit memory density and uses tin lead terminal finish. This rectangular package is ideal for applications requiring specialized shape memory ICs.
DS6204U by Analog Devices

DS6204U

Analog Devices

DS6204U by Analog Devices is a CMOS memory circuit with 256-bit memory density. It operates b/w 0 °C to 70°C, making it suitable for commercial applications. With a compact rectangular package and 5 terminals, it offers reliable performance in various electronic devices.
TMX27C512-25 by Texas Instruments

TMX27C512-25

Texas Instruments

Other Memory ICs;
MR25H256CDF by Everspin Technologies

MR25H256CDF

Everspin Technologies

MR25H256CDF by Everspin Technologies is a 32KX8 memory IC with CMOS technology. Operating at 3V, it has a temperature range of -40 to 85 °C and offers 262144 bits memory density. Ideal for industrial applications, this synchronous memory chip comes in a small outline package with surface mount capability.
DS2411P+T&R by Maxim Integrated

DS2411P+T&R

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Qualification: Not Qualified;
47C16T-I/SN by Microchip Technology

47C16T-I/SN

Microchip Technology

47C16T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with an organization of 2KX8 and a memory density of 16384 bit. It operates at a nominal voltage of 5V and has a max access time of 400 ns. This memory circuit is commonly used in industrial applications requiring reliable data storage.
ATSHA204A-SSHCZ-T by Atmel

ATSHA204A-SSHCZ-T

Atmel

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Width: 3.9 mm;
LC331632M-70 by Onsemi

LC331632M-70

Onsemi

LC331632M-70 by Onsemi is a 32KX16 CMOS memory IC with 3-STATE output, operating at temperatures from 0 to 70 °C. It has a supply voltage of 5V and standby current of 0.002A, suitable for applications requiring high memory density and fast access times in commercial-grade environments.
DS90922R-000 by Analog Devices

DS90922R-000

Analog Devices

DS90922R-000 by Analog Devices is a CMOS MEMORY CIRCUIT with 2 terminals in a ROUND METAL package. It features TIN LEAD finish and THROUGH-HOLE terminal form. Ideal for applications requiring Other Function Memory ICs in CYLINDRICAL style packages.
TMX27PC128N45 by Texas Instruments

TMX27PC128N45

Texas Instruments

Other Memory ICs;
CY7C245A-18WMB by Teledyne E2v (Uk)

CY7C245A-18WMB

Teledyne E2v (Uk)

Other Memory ICs;
CY15B256Q-SXA by Infineon Technologies

CY15B256Q-SXA

Infineon Technologies

CY15B256Q-SXA by Infineon Technologies is a 32KX8 memory IC with synchronous operation and 262144 bit memory density. It operates at a voltage range of 2V to 3.6V, suitable for industrial applications requiring reliable small outline package (SOP) design with gull wing terminals.
TMS27PC64-25N by Texas Instruments

TMS27PC64-25N

Texas Instruments

Other Memory ICs;
M36LLR8860D1ZAQ by STMicroelectronics

M36LLR8860D1ZAQ

STMicroelectronics

M36LLR8860D1ZAQ by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M x 16 organization and a mixed FLASH+PSRAM type. It operates at a nominal voltage of 1.8V with a max temp of 85 °C, ideal for compact applications. Its grid array design ensures efficient space utilization in electronic devices.
SN74AS871FN3 by Texas Instruments

SN74AS871FN3

Texas Instruments

SN74AS871FN3 by Texas Instruments is a TTL technology memory IC with 28 terminals in a square chip carrier package. Operating temperature range of 0-70°C makes it suitable for commercial applications. It features J bend terminals and is surface mountable, ideal for various electronic devices.
TACT2153-28FN by Texas Instruments

TACT2153-28FN

Texas Instruments

TACT2153-28FN by Texas Instruments is a 1KX11 memory circuit IC with 11264-bit memory density. It features a max access time of 25ns, operates b/w 0°C to 70°C, and has a terminal pitch of 1.27mm. This chip carrier package is ideal for applications requiring fast data retrieval in commercial-grade temperature environments.
FM31256-GTR by Cypress Semiconductor

FM31256-GTR

Cypress Semiconductor

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 14; Package Code: SOP; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;
M36LLR8760M1ZAQT by STMicroelectronics

M36LLR8760M1ZAQT

STMicroelectronics

M36LLR8760M1ZAQT by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact electronic applications. With its fine-pitch grid array design, it ensures efficient space utilization in modern devices.
M36LLR8760M1ZAQE by STMicroelectronics

M36LLR8760M1ZAQE

STMicroelectronics

M36LLR8760M1ZAQE by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.
M36LLR8760M1ZAQF by STMicroelectronics

M36LLR8760M1ZAQF

STMicroelectronics

M36LLR8760M1ZAQF by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.