Micron Technology - MT60B1G16HC-48BIT:A

  1. Home
  2. Micron Technology - MT60B1G16HC-48BIT:A
MT60B1G16HC-48BIT:A by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT60B1G16HC-48BIT:A
Description DDR5 DRAM;
Datasheet MT60B1G16HC-48BIT:A Datasheet
In Stock425
NAME DESCRIPTION
Memory IC Type: DDR5 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
425 - -

Popular Products

Category Top Products

MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
M378A1K43CB2-CRC by Samsung

M378A1K43CB2-CRC

Samsung

Samsung M378A1K43CB2-CRC DDR4 DRAM Module features 1GX64 organization, operates at 1200 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring synchronous operation and common I/O type with self-refresh capability.
M464S3254CTS-L7A by Samsung

M464S3254CTS-L7A

Samsung

Samsung M464S3254CTS-L7A is a 32MX64 DRAM module with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers 70°C max temp, DUAL BANK PAGE BURST access mode, and 8192 refresh cycles for efficient memory performance.
S70KS1282GABHV020 by Infineon Technologies

S70KS1282GABHV020

Infineon Technologies

Infineon's S70KS1282GABHV020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 105°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its low profile grid array package and common I/O type.
MT40A1G16KNR-062E:E by Micron Technology

MT40A1G16KNR-062E:E

Micron Technology

Micron Technology's MT40A1G16KNR-062E:E is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Suitable for applications requiring high-speed data processing in devices with limited space and power constraints.
MT48LC8M16A2P-6A:L by Micron Technology

MT48LC8M16A2P-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
HX316LS9IBK2/8 by Kingston Technology Company

HX316LS9IBK2/8

Kingston Technology Company

Kingston's HX316LS9IBK2/8 DDR3L DRAM Module has 512MX64 organization, operates at 1.35V, and offers a memory width of 64 bits. Ideal for applications requiring high-speed synchronous operation in microelectronic assemblies with dual terminals and multi-bank page burst access mode.
KM44C256CP-7 by Samsung

KM44C256CP-7

Samsung

Samsung's KM44C256CP-7 is a 256Kx4 DRAM with 70ns access time, operating at 5V. It features a 3-STATE output and fast page access mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.
MT41K1G8RKB-107:P by Micron Technology

MT41K1G8RKB-107:P

Micron Technology

Micron Technology's MT41K1G8RKB-107:P is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and laptops.
IS42S32400F-6BLI-TR by Integrated Silicon Solution

IS42S32400F-6BLI-TR

Integrated Silicon Solution

IS42S32400F-6BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times in a grid array package.
MT48LC4M32B2P-6AIT:LTR by Micron Technology

MT48LC4M32B2P-6AIT:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and offers 5.4 ns max access time. Ideal for applications requiring high-speed memory performance in harsh environments.
MT41K256M16TW-107IT:P by Micron Technology

MT41K256M16TW-107IT:P

Micron Technology

Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.
NT6SM16M32AK-S1 by Nanya Technology

NT6SM16M32AK-S1

Nanya Technology

NT6SM16M32AK-S1 by Nanya Technology is a 16MX32 Synchronous DRAM with 16777216 words, 536870912 bit memory density, and operates at a max clock frequency of 166 MHz. Ideal for applications requiring fast data access and storage in devices like smartphones, tablets, and networking equipment.
IS42S16320D-7TLI by Integrated Silicon Solution

IS42S16320D-7TLI

Integrated Silicon Solution

IS42S16320D-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring fast access time of 5.4ns and memory density of 536MB in a small outline package.
MT41K512M16VRN-107AIT:P by Micron Technology

MT41K512M16VRN-107AIT:P

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
MT41K256M8DA-125:K by Micron Technology

MT41K256M8DA-125:K

Micron Technology

Micron Technology's MT41K256M8DA-125:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as servers, workstations, and networking equipment.
MT41K512M8DA-107AAT:PTR by Micron Technology

MT41K512M8DA-107AAT:PTR

Micron Technology

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT48LC8M16A2TG-6A:G by Micron Technology

MT48LC8M16A2TG-6A:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for applications requiring fast memory access and high data density in commercial temperature environments.
AS4C16M16SA-6BIN by Alliance Memory

AS4C16M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C16M16SA-6BIN is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Featuring self-refresh and common I/O type, it operates at 3.3V with a memory density of 268MB. Ideal for systems requiring fast access times and high memory capacity.