Micron Technology - MT60B2G8HB-56B:G

  1. Home
  2. Micron Technology - MT60B2G8HB-56B:G
MT60B2G8HB-56B:G by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT60B2G8HB-56B:G
Description DDR5 DRAM;
Datasheet MT60B2G8HB-56B:G Datasheet
In Stock2,455
NAME DESCRIPTION
Memory IC Type: DDR5 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,455 $20.260 $49,738.300

Popular Products

Category Top Products

D2164A-20 by Intel

D2164A-20

Intel

Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.
K4B1G1646G-BCNB by Samsung

K4B1G1646G-BCNB

Samsung

Samsung's K4B1G1646G-BCNB is a 64MX16 DDR3 DRAM with 1073741824 bit memory density. It operates at a max clock frequency of 1066 MHz and has a peak reflow temperature of 260°C. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT41J64M16TW-093:J by Micron Technology

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.
MT41J128M16JT-093G by Micron Technology

MT41J128M16JT-093G

Micron Technology

Micron Technology's MT41J128M16JT-093G is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
NT5CC128M16JR-EKT by Nanya Technology

NT5CC128M16JR-EKT

Nanya Technology

NT5CC128M16JR-EKT by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
MT53E768M32D4DE-046AAT:E by Micron Technology

MT53E768M32D4DE-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.
MT40A1G8WE-075E:BTR by Micron Technology

MT40A1G8WE-075E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.
MT48LC32M16A2P-75IT by Micron Technology

MT48LC32M16A2P-75IT

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact small outline package design.
S70KS1282GABHI020 by Cypress Semiconductor

S70KS1282GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
MT53E2G32D4DE-046WT:C by Micron Technology

MT53E2G32D4DE-046WT:C

Micron Technology

LPDDR4 DRAM;
MT48LC8M16A2P-6AAIT:L by Micron Technology

MT48LC8M16A2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.
AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
W631GG6NB-12 by Winbond Electronics

W631GG6NB-12

Winbond Electronics

Winbond Electronics' W631GG6NB-12 is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz. It features a 96-terminal grid array package suitable for synchronous applications. With a low standby current of 0.04 Amp and common I/O type, it's ideal for high-speed memory requirements in various electronic devices.
W3H32M64E-533SBI by Microsemi

W3H32M64E-533SBI

Microsemi

Microsemi's W3H32M64E-533SBI DDR2 DRAM features 32MX64 organization, 1.8V supply voltage, and operates synchronously. Ideal for industrial applications with a temperature range of -40 to 85°C, it offers self-refresh capability and a memory density of 2147483648 bits.
IS42S16800F-7TLI-TR by Integrated Silicon Solution

IS42S16800F-7TLI-TR

Integrated Silicon Solution

IS42S16800F-7TLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times.
MT41K512M8DA-107AAT:P by Micron Technology

MT41K512M8DA-107AAT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AAT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.
IS43TR16256BL-107MBLI by Integrated Silicon Solution

IS43TR16256BL-107MBLI

Integrated Silicon Solution

IS43TR16256BL-107MBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.35V supply, operating from -40 to 95°C. Featuring synchronous mode and self-refresh, it has a thin profile grid array package suitable for industrial applications requiring high memory density and multi-bank page burst access.
M378B5673EH1-CH9 by Samsung

M378B5673EH1-CH9

Samsung

Samsung M378B5673EH1-CH9 DDR DRAM features 256MX64 organization, operates at 667 MHz with 3-STATE output. Suitable for high-performance computing applications due to its synchronous operation and self-refresh capability.
NT5CC256M16EP-EKI by Nanya Technology

NT5CC256M16EP-EKI

Nanya Technology

NT5CC256M16EP-EKI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
MT41K64M16TW-107:J by Micron Technology

MT41K64M16TW-107:J

Micron Technology

MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.