MT8S1632M-15 by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT8S1632M-15
Description	SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: SIMM; Package Shape: RECTANGULAR; Qualification: Not Qualified;
Datasheet	MT8S1632M-15 Datasheet
In Stock	971

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.024 Amp
Organization:	16KX32
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Surface Mount:	NO
Maximum Supply Current:	1460 mA
No. of Terminals:	64
No. of Words:	16384 words
Terminal Position:	SINGLE
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-PSMA-N64
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	SIMM
Input/Output Type:	COMMON
Memory Density:	524288 bit
Minimum Standby Voltage:	4.5 V
Memory IC Type:	SRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	32
Qualification:	Not Qualified
Package Equivalence Code:	SSIM64,.2
Maximum Access Time:	15 ns
No. of Words Code:	16K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	5

Pricing (USD)

Qty.	Unit Price	Ext. Price
971	-	-

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;