MT8VR6416AG-845B1 by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT8VR6416AG-845B1
Description	RAMBUS DRAM MODULE; No. of Terminals: 84; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY; Package Body Material: UNSPECIFIED; Organization: 64MX16;
Datasheet	MT8VR6416AG-845B1 Datasheet
In Stock	771

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
No. of Ports:	1
Memory Density:	1073741824 bit
Organization:	64MX16
Access Mode:	BLOCK ORIENTED PROTOCOL
Surface Mount:	NO
Memory IC Type:	RAMBUS DRAM MODULE
Memory Width:	16
No. of Functions:	1
No. of Terminals:	84
No. of Words:	67108864 words
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
No. of Words Code:	64M
JESD-30 Code:	R-XDMA-N184
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Nominal Supply Voltage / Vsup (V):	2.5
Additional Features:	IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT

Pricing (USD)

Qty.	Unit Price	Ext. Price
771	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;