MT9V022I77ATM by Micron Technology | Sensors & Transducers

Image shown is a representation only.

Manufacturer	Micron Technology
Manufacturer's Part Number	MT9V022I77ATM
Description	IMAGE SENSOR,CMOS; Mounting Feature: SURFACE MOUNT; Output Type: DIGITAL VOLTAGE; Package Shape or Style: SQUARE; Output Range: 0.30-2.90V; Vertical Pixel: 480;
Datasheet	MT9V022I77ATM Datasheet
In Stock	4,081

NAME	DESCRIPTION
Minimum Supply Voltage:	3 V
Maximum Operating Current:	60 mA
Output Range:	0.30-2.90V
Output Type:	DIGITAL VOLTAGE
Sub-Category:	CCD Image Sensors
Terminal Finish:	Tin/Lead (Sn/Pb)
Data Rate:	27 Mbps
Termination Type:	SOLDER
Output Interface Type:	2-WIRE INTERFACE
Frame Rate:	60 fps
Maximum Operating Temperature:	85 Cel
Master Clock:	26.6 MHz
Maximum Supply Voltage:	3.6 V
Optical Format (inch):	1/3
Array Type:	LINEAR
Pixel Size (um):	6X6
Dynamic Range:	55 dB
JESD-609 Code:	e0
Minimum Operating Temperature:	-40 Cel
Mounting Feature:	SURFACE MOUNT
Body Width:	9 inch
Sensors or Transducers Type:	IMAGE SENSOR,CMOS
Vertical Pixel:	480
Package Shape or Style:	SQUARE
Body Height:	1.5 mm
Additional Features:	DOUBLE BUFFERED GLOBAL SHUTTER
Body Length/Diameter:	9 mm
Power Supplies (V):	3.3
Horizontal Pixel:	752

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,081	$19.718	$80,469.158

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;