Micron Technology - MT9VDDT3272HIG-335XX

  1. Home
  2. Micron Technology - MT9VDDT3272HIG-335XX
MT9VDDT3272HIG-335XX by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT9VDDT3272HIG-335XX
Description DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
Datasheet MT9VDDT3272HIG-335XX Datasheet
In Stock1,914
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 32MX72
Maximum Time At Peak Reflow Temperature (s): 30
Access Mode: SINGLE BANK PAGE BURST
Minimum Supply Voltage (Vsup): 2.3 V
Surface Mount: NO
No. of Terminals: 200
No. of Words: 33554432 words
Terminal Position: DUAL
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Technology: CMOS
JESD-30 Code: R-XDMA-N200
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIMM
No. of Ports: 1
Memory Density: 2415919104 bit
Self Refresh: YES
Memory IC Type: DDR DRAM MODULE
Minimum Operating Temperature: -40 Cel
Memory Width: 72
No. of Functions: 1
Qualification: Not Qualified
Maximum Access Time: .7 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 2.5
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 235
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 2.7 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,914 - -

Popular Products

Category Top Products

IS42S16400J-7BLI-TR by Integrated Silicon Solution

IS42S16400J-7BLI-TR

Integrated Silicon Solution

IS42S16400J-7BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temp. Ideal for industrial applications requiring high memory density and fast access times.
MT41K128M16JT-125:K by Micron Technology

MT41K128M16JT-125:K

Micron Technology

MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
HY5DU573222FP-33 by Sk Hynix

HY5DU573222FP-33

Sk Hynix

SK Hynix's HY5DU573222FP-33 is a DDR1 DRAM with 8MX32 organization, operating at 300 MHz. It features 144 terminals in a low profile grid array package, suitable for applications requiring high-speed synchronous memory access and common I/O type. With a max clock frequency of 300 MHz and 268435456-bit memory density, it offers fast data processing capabilities for commercial-grade systems.
MT41J128M16JT-107:K by Micron Technology

MT41J128M16JT-107:K

Micron Technology

Micron Technology's MT41J128M16JT-107:K is a DDR3 DRAM with 128MX16 organization, operating at 933 MHz. It features a 1.5V supply voltage and offers 134217728 words of memory. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS42S32400F-7BLI-TR by Integrated Silicon Solution

IS42S32400F-7BLI-TR

Integrated Silicon Solution

IS42S32400F-7BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. Featuring a max clock frequency of 143 MHz, it suits industrial applications requiring high memory density and fast access times.
IS42S32400F-6TL by Integrated Silicon Solution

IS42S32400F-6TL

Integrated Silicon Solution

IS42S32400F-6TL by Integrated Silicon Solution is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
M386A8K40BM1-CRC by Samsung

M386A8K40BM1-CRC

Samsung

Samsung's M386A8K40BM1-CRC is a DDR DRAM MODULE with 8GX72 organization, 72 memory width, and 618475290624 bit memory density. It operates synchronously at 1.2V, featuring self-refresh capability for various applications requiring high-speed data processing in microelectronic assemblies.
AS4C64M16D2A-25BCNTR by Alliance Memory

AS4C64M16D2A-25BCNTR

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M378T2863RZS-CE6 by Samsung

M378T2863RZS-CE6

Samsung

Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
S27KL0642DPBHI030 by Cypress Semiconductor

S27KL0642DPBHI030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Supply Voltage (Vsup): 3.6 V;
M393A2K43DB3-CWE by Samsung

M393A2K43DB3-CWE

Samsung

Samsung M393A2K43DB3-CWE DDR4 DRAM Module features 16GX8 organization, 1.2V supply voltage, and 137438953472-bit memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst access mode.
AS4C4M16SA-6TINTR by Alliance Memory

AS4C4M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C4M16SA-6TINTR is a 3.3V, 4MX16 Synchronous DRAM with 85°C max temp. Ideal for industrial applications, it features self-refresh mode, 5.4ns access time, and thin profile grid array package.
AS4C512M8D4-83BIN by Alliance Memory

AS4C512M8D4-83BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT41J64M16TW-093:J by Micron Technology

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.
K4B2G1646C-HCH9 by Samsung

K4B2G1646C-HCH9

Samsung

Samsung's K4B2G1646C-HCH9 DDR3 DRAM features 128MX16 organization, 667 MHz clock frequency, and 1.5V supply voltage. Ideal for high-performance computing applications due to its fast access time and large memory density of 2147483648 bits.
MT48LC16M16A2P-75:DTR by Micron Technology

MT48LC16M16A2P-75:DTR

Micron Technology

MT48LC16M16A2P-75:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a small outline package.
K4S641632H-TC60 by Samsung

K4S641632H-TC60

Samsung

Samsung's K4S641632H-TC60 is a 4MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for commercial applications, it offers synchronous operation, self-refresh capability, and a small outline package design.
W631GG6NB09I by Winbond Electronics

W631GG6NB09I

Winbond Electronics

Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
KVR1333D3S9/4GKC by Kingston Technology Company

KVR1333D3S9/4GKC

Kingston Technology Company

DDR DRAM MODULE;
IS42S16320F-7BLI by Integrated Silicon Solution

IS42S16320F-7BLI

Integrated Silicon Solution

IS42S16320F-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.