Micron Technology - MTA144ASQ16G72LSZ-2S6XX

  1. Home
  2. Micron Technology - MTA144ASQ16G72LSZ-2S6XX
MTA144ASQ16G72LSZ-2S6XX by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA144ASQ16G72LSZ-2S6XX
Description DDR4 DRAM MODULE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MTA144ASQ16G72LSZ-2S6XX Datasheet
In Stock1,346
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Memory IC Type: DDR4 DRAM MODULE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,346 - -

Popular Products

Category Top Products

IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
M378T2863QZS-CF7 by Samsung

M378T2863QZS-CF7

Samsung

Samsung M378T2863QZS-CF7 DDR DRAM Module has 128MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-speed data processing in computing applications due to its synchronous operation and 64 memory width.
MT42C8256DJ-8 by Micron Technology

MT42C8256DJ-8

Micron Technology

Micron Technology's MT42C8256DJ-8 is a 256KX8 DRAM with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE WITH EDO access, and offers 80ns max access time. Ideal for video applications due to its high memory density of 2097152 bits and small outline package style.
AS4C256M16D3LC-12BANTR by Alliance Memory

AS4C256M16D3LC-12BANTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.
K4A4G165WF-BCTD by Samsung

K4A4G165WF-BCTD

Samsung

Samsung's K4A4G165WF-BCTD is a 256MX16 DDR4 DRAM with 4294967296-bit memory density. Operating at 1.2V, it has a memory width of 16 and supports CMOS technology. Ideal for applications requiring high-speed data processing in devices like computers and servers due to its efficient organization and max operating temperature of 85°C.
MT48LC16M16A2P-6AXIT:GTR by Micron Technology

MT48LC16M16A2P-6AXIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
KM48V2104BK-6 by Samsung

KM48V2104BK-6

Samsung

Samsung's KM48V2104BK-6 is a 2MX8 EDO DRAM with 3.3V supply, operating in FAST PAGE mode with 60ns access time. It features 28 terminals in a small outline package suitable for commercial temperature applications. With a memory density of 16Mbit and 2048 refresh cycles, it offers high-speed data storage solutions.
M393A2G40EB2-CTD by Samsung

M393A2G40EB2-CTD

Samsung

Samsung's M393A2G40EB2-CTD is a 288-terminal DDR DRAM module with 72-bit memory width and 2GX72 organization. Operating at 1.2V, it offers synchronous mode and self-refresh capability, making it ideal for high-performance computing applications requiring fast data access and reliable memory operations.
MT61K512M32KPA-16:BTR by Micron Technology

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
IS42S16160J-6BLI by Integrated Silicon Solution

IS42S16160J-6BLI

Integrated Silicon Solution

IS42S16160J-6BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance in a compact grid array package.
W9812G6KH-5I by Winbond Electronics

W9812G6KH-5I

Winbond Electronics

W9812G6KH-5I by Winbond Electronics is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V and has a max access time of 4.5ns. Ideal for industrial applications requiring fast and reliable memory performance in compact spaces.
W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.
W957A8MFYA5I by Winbond Electronics

W957A8MFYA5I

Winbond Electronics

EDO DRAM;
S27KL0642DPBHI023 by Cypress Semiconductor

S27KL0642DPBHI023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;
MT48LC8M16A2TG-8E by Micron Technology

MT48LC8M16A2TG-8E

Micron Technology

Micron Technology's MT48LC8M16A2TG-8E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 125 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory performance in a compact thin profile package.
MT48LC32M16A2P-75IT:CTR by Micron Technology

MT48LC32M16A2P-75IT:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.
MT40A1G16TB-062EIT:F by Micron Technology

MT40A1G16TB-062EIT:F

Micron Technology

Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
TC514400AP-70 by Toshiba

TC514400AP-70

Toshiba

Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.
M378A5143DB0-CPB by Samsung

M378A5143DB0-CPB

Samsung

Samsung M378A5143DB0-CPB is a 512MX64 DDR DRAM MODULE with 1066 MHz clock frequency. Operating at 1.2V, it offers 64-bit memory width and 34359738368 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
S70KL1282DPBHA023 by Cypress Semiconductor

S70KL1282DPBHA023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Technology: CMOS;