Micron Technology - MTA18ASF2G72HZ-2G3E1

  1. Home
  2. Micron Technology - MTA18ASF2G72HZ-2G3E1
MTA18ASF2G72HZ-2G3E1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA18ASF2G72HZ-2G3E1
Description DDR DRAM MODULE;
Datasheet MTA18ASF2G72HZ-2G3E1 Datasheet
In Stock458
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
458 - -

Popular Products

Category Top Products

MT41J256M16HA-125:ETR by Micron Technology

MT41J256M16HA-125:ETR

Micron Technology

Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.
MT46V32M16P-5BIT by Micron Technology

MT46V32M16P-5BIT

Micron Technology

Micron Technology's MT46V32M16P-5BIT is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a compact package.
MT40A1G16KD-062EIT:E by Micron Technology

MT40A1G16KD-062EIT:E

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT53E256M32D2DS-046AUT:B by Micron Technology

MT53E256M32D2DS-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MSM5416273-50GS-K by Oki Electric Industry

MSM5416273-50GS-K

Oki Electric Industry

VIDEO DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: SSOP; Package Shape: RECTANGULAR; Organization: 256KX16;
IS43TR16128B-15HBLI by Integrated Silicon Solution

IS43TR16128B-15HBLI

Integrated Silicon Solution

IS43TR16128B-15HBLI by Integrated Silicon Solution is a 128MX16 DDR3 DRAM with 667 MHz clock frequency. It operates asynchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT41K512M16TNA-125IT:E by Micron Technology

MT41K512M16TNA-125IT:E

Micron Technology

Micron Technology's MT41K512M16TNA-125IT:E is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.
MT40A1G8SA-062EAUT:E by Micron Technology

MT40A1G8SA-062EAUT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAUT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously, supports self-refresh, and has a max temperature of 125°C. Ideal for applications requiring high-speed memory in automotive or industrial environments.
MT41K256M16HA-125IT by Micron Technology

MT41K256M16HA-125IT

Micron Technology

Micron Technology's MT41K256M16HA-125IT is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
MT46V16M16P-5BAIT:M by Micron Technology

MT46V16M16P-5BAIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BAIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT8HTF12864HDZ-800M1 by Micron Technology

MT8HTF12864HDZ-800M1

Micron Technology

Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.
AS4C4M16SA-6TINTR by Alliance Memory

AS4C4M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C4M16SA-6TINTR is a 3.3V, 4MX16 Synchronous DRAM with 85°C max temp. Ideal for industrial applications, it features self-refresh mode, 5.4ns access time, and thin profile grid array package.
NT5TU64M16HG-ACH by Nanya Technology

NT5TU64M16HG-ACH

Nanya Technology

NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.
MT46H32M16LFBF-6IT:CTR by Micron Technology

MT46H32M16LFBF-6IT:CTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT48LC4M16A2P-6AIT:J by Micron Technology

MT48LC4M16A2P-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.
M378B5273DH0-CH9 by Samsung

M378B5273DH0-CH9

Samsung

Samsung M378B5273DH0-CH9 DDR DRAM Module operates at 667MHz with 512MX64 organization. It features 512M words code, 34359738368 bit memory density, and dual bank page burst access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT60B2G8HB-48B:A by Micron Technology

MT60B2G8HB-48B:A

Micron Technology

Micron Technology's MT60B2G8HB-48B:A is a DDR5 DRAM with 2GX8 organization, operating at up to 2403.8 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR

Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
NT5CC256M16EP-EK by Nanya Technology

NT5CC256M16EP-EK

Nanya Technology

NT5CC256M16EP-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and low power consumption in a compact grid array package style.
S27KL0642GABHA023 by Infineon Technologies

S27KL0642GABHA023

Infineon Technologies

Infineon's S27KL0642GABHA023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.