Micron Technology - MTC8C1084S1UC56BA1

  1. Home
  2. Micron Technology - MTC8C1084S1UC56BA1
MTC8C1084S1UC56BA1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTC8C1084S1UC56BA1
Description DDR5 DRAM MODULE;
Datasheet MTC8C1084S1UC56BA1 Datasheet
In Stock2,038
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,038 - -

Popular Products

Category Top Products

K4H561638N-LCB3 by Samsung

K4H561638N-LCB3

Samsung

Samsung's K4H561638N-LCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
AS4C256M16D3LC-12BANTR by Alliance Memory

AS4C256M16D3LC-12BANTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.
MT48LC16M16A2B4-7EIT:G by Micron Technology

MT48LC16M16A2B4-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT48LC8M16A2P-6AIT:L by Micron Technology

MT48LC8M16A2P-6AIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features self-refresh capability, common I/O type, and supports four-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times.
M368L3223FTN-CCC by Samsung

M368L3223FTN-CCC

Samsung

Samsung's M368L3223FTN-CCC DDR DRAM MODULE features 32MX64 organization, 2147483648 bit memory density, and 200 MHz max clock frequency. Ideal for applications requiring high-speed data processing and large memory capacity in commercial temperature environments.
MT48LC2M32B2P-7:GTR by Micron Technology

MT48LC2M32B2P-7:GTR

Micron Technology

MT48LC2M32B2P-7:GTR by Micron Technology is a 2MX32 Synchronous DRAM with a memory density of 67108864 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This memory IC is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
MT41K256M16HA-125IT:ETR by Micron Technology

MT41K256M16HA-125IT:ETR

Micron Technology

Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
K4W1G1646G-BC11 by Samsung

K4W1G1646G-BC11

Samsung

Samsung's K4W1G1646G-BC11 DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and large memory capacity.
MT48LC16M16A2P-6AIT:GTR by Micron Technology

MT48LC16M16A2P-6AIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
MT41K64M16TW-107:J by Micron Technology

MT41K64M16TW-107:J

Micron Technology

MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.
IS42S16400J-6TL by Integrated Silicon Solution

IS42S16400J-6TL

Integrated Silicon Solution

IS42S16400J-6TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for commercial applications requiring fast memory access and high data density in a compact form factor.
K4B2G0846D-HCH9 by Samsung

K4B2G0846D-HCH9

Samsung

Samsung's K4B2G0846D-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max operating temperature of 85°C.
W9812G6KH-6I by Winbond Electronics

W9812G6KH-6I

Winbond Electronics

The Winbond Electronics W9812G6KH-6I is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V, featuring a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
MT40A1G8WE-083EAIT:B by Micron Technology

MT40A1G8WE-083EAIT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
M393A2K43CB2-CVF by Samsung

M393A2K43CB2-CVF

Samsung

Samsung's M393A2K43CB2-CVF DDR4 DRAM module features 16GX8 organization, 1.2V supply voltage, and 137.4Gb memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst capability in a compact MICROELECTRONIC ASSEMBLY package.
AS4C512M16D3LA-10BCN by Alliance Memory

AS4C512M16D3LA-10BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
MT53E1536M32D4DT-046AIT:A by Micron Technology

MT53E1536M32D4DT-046AIT:A

Micron Technology

Micron Technology's MT53E1536M32D4DT-046AIT:A is a LPDDR4 DRAM with 1536MX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
MT41K128M16JT-107:KTR by Micron Technology

MT41K128M16JT-107:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption.
K4H561638N-LCCC by Samsung

K4H561638N-LCCC

Samsung

Samsung's K4H561638N-LCCC DDR1 DRAM features 16MX16 organization, 200 MHz clock frequency, and 70°C max operating temp. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
IS42S16400J-7TL-TR by Integrated Silicon Solution

IS42S16400J-7TL-TR

Integrated Silicon Solution

IS42S16400J-7TL-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and 70°C max temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.