MTFDDAK256MBD-2AK12ITYY by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MTFDDAK256MBD-2AK12ITYY
Description	FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; Memory Density: 2199023255552 bit; Memory Width: 8; Technology: CMOS;
Datasheet	MTFDDAK256MBD-2AK12ITYY Datasheet
In Stock	1,472

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Memory Density:	2199023255552 bit
Organization:	256GX8
Surface Mount:	NO
Memory IC Type:	FLASH MODULE
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
No. of Functions:	1
Type:	TLC NAND TYPE
No. of Words:	274877906944 words
Terminal Position:	SINGLE
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
No. of Words Code:	256G
JESD-30 Code:	R-XSMA-N
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,472	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;

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Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;