MTFDDAT256MAY-1AH12ABYY by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MTFDDAT256MAY-1AH12ABYY
Description	FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 256GX8;
Datasheet	MTFDDAT256MAY-1AH12ABYY Datasheet
In Stock	469

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	256GX8
Output Characteristics:	3-STATE
Maximum Seated Height:	3.75 mm
Programming Voltage (V):	3.3
Minimum Supply Voltage (Vsup):	3.14 V
Surface Mount:	NO
No. of Terminals:	52
No. of Words:	274877906944 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XDMA-N52
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	DIMM
Width:	29.85 mm
Memory Density:	2199023255552 bit
Memory IC Type:	FLASH MODULE
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
No. of Functions:	1
Type:	MLC NAND TYPE
Length:	50.8 mm
No. of Words Code:	256G
Nominal Supply Voltage / Vsup (V):	3.3
Parallel or Serial:	SERIAL
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.46 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
469	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.