Micron Technology - MTFDHAL7T6TCT-1AR18ABAA

  1. Home
  2. Micron Technology - MTFDHAL7T6TCT-1AR18ABAA
MTFDHAL7T6TCT-1AR18ABAA by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTFDHAL7T6TCT-1AR18ABAA
Description MEMORY CIRCUIT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MTFDHAL7T6TCT-1AR18ABAA Datasheet
In Stock2,106
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Memory IC Type: MEMORY CIRCUIT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,106 - -

Popular Products

Category Top Products

DS2401+ by Maxim Integrated

DS2401+

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TO-92; Package Shape: ROUND; Terminal Finish: MATTE TIN;
M36P0R9060E0ZACF by STMicroelectronics

M36P0R9060E0ZACF

STMicroelectronics

M36P0R9060E0ZACF from STMicroelectronics is a synchronous memory IC featuring a mixed FLASH+PSRAM configuration with 32M words and a max access time of 70 ns. It operates at a nominal voltage of 1.8V, suitable for compact applications. Its thin profile and grid array design make it ideal for space-constrained devices.
M36W0R6030T0ZAQ by STMicroelectronics

M36W0R6030T0ZAQ

STMicroelectronics

M36W0R6030T0ZAQ by STMicroelectronics is a mixed memory IC featuring 4M x 16 organization, operating at 1.8V with a max temp of 85 °C. It supports asynchronous mode and offers high density (64Mb) for industrial applications. Ideal for compact, efficient designs due to its thin profile and low power consumption.
TMS27PC32-2JL by Texas Instruments

TMS27PC32-2JL

Texas Instruments

Other Memory ICs;
47C04T-I/SN by Microchip Technology

47C04T-I/SN

Microchip Technology

47C04T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a memory density of 4096 bit and max access time of 400ns. This small outline package is ideal for industrial applications requiring reliable non-volatile memory storage.
M36W108T100ZM5 by STMicroelectronics

M36W108T100ZM5

STMicroelectronics

M36W108T100ZM5 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 1M x 8 organization with mixed FLASH+SRAM technology. It operates b/w -20 °C to 85°C and supports power supplies of 2.7V to 3.6V. Ideal for compact applications requiring efficient data storage and retrieval.
SMJ2708-45FEM by Texas Instruments

SMJ2708-45FEM

Texas Instruments

SMJ2708-45FEM by Texas Instruments is a 1Kx8 MOS memory IC with 8192-bit density. It features 3-STATE output, operates b/w -55 to 125°C, and has a max access time of 450ns. Ideal for military-grade applications requiring high-speed data storage in a compact chip carrier package.
TMS2708-45JDL by Texas Instruments

TMS2708-45JDL

Texas Instruments

TMS2708-45JDL by Texas Instruments is a 1KX8 MOS memory IC with 8192-bit density. It features 3-STATE output, operates b/w 0 to 70°C, and has a max access time of 450 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.
DM76S64BWF/J883B by Texas Instruments

DM76S64BWF/J883B

Texas Instruments

DM76S64BWF/J883B by Texas Instruments is a MILITARY-grade TTL memory IC with 16 terminals in IN-LINE package. Operating temp range: -55 to 125°C. Ideal for applications requiring high reliability and performance in harsh environments.
TMS4C1050-60SD by Texas Instruments

TMS4C1050-60SD

Texas Instruments

TMS4C1050-60SD by Texas Instruments is a 20-terminal MEMORY CIRCUIT IC with 5V supply, 50ns access time, and 35mA max supply current. It operates b/w 0-70°C in commercial grade applications requiring reliable memory storage solutions.
M36W216T100ZA1T by STMicroelectronics

M36W216T100ZA1T

STMicroelectronics

M36W216T100ZA1T by STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage and operates b/w 2.7V to 3.3V. It features a density of 16Mbit and supports up to 1M x 16 organization. Ideal for commercial applications requiring compact memory solutions.
DS2401P+T&R-C01 by Analog Devices

DS2401P+T&R-C01

Analog Devices

MEMORY CIRCUIT;
TMS27C32-12NE by Texas Instruments

TMS27C32-12NE

Texas Instruments

Other Memory ICs;
TMS27PC32-25JE4 by Texas Instruments

TMS27PC32-25JE4

Texas Instruments

Other Memory ICs;
AT88SC25616C-SU-T by Microchip Technology

AT88SC25616C-SU-T

Microchip Technology

AT88SC25616C-SU-T by Microchip is a 262144-bit CRYPTO MEMORY IC with 32KX8 organization and 35 ns max access time. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and requires a supply voltage of 2.7-5.5 V. Ideal for secure memory applications in industrial settings due to its small outline package and gull wing terminal form.
ST25DV04K-JFR6L3 by STMicroelectronics

ST25DV04K-JFR6L3

STMicroelectronics

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CY15B102Q-SXE by Infineon Technologies

CY15B102Q-SXE

Infineon Technologies

CY15B102Q-SXE by Infineon Technologies is a 256KX8 MEMORY CIRCUIT with SYNCHRONOUS operation and 3.3V nominal voltage. Ideal for AUTOMOTIVE applications, it features a small outline package style, operates in temperatures ranging from -40 to 125 °C, and has a memory density of 2097152 bit.
LC331632M-12 by Onsemi

LC331632M-12

Onsemi

LC331632M-12 by Onsemi is a 32KX16 CMOS memory IC with 524288 bit density. It operates at 5V, has a max access time of 120ns, and features a 3-STATE output. This small outline package with gull wing terminals is ideal for commercial applications requiring common I/O functionality.
DS9093F by Analog Devices

DS9093F

Analog Devices

MEMORY CIRCUIT; Package Shape: UNSPECIFIED; JESD-30 Code: X-XXSS-X; Package Body Material: UNSPECIFIED; Terminal Position: UNSPECIFIED; Surface Mount: NO;
M36W108B120ZN1 by STMicroelectronics

M36W108B120ZN1

STMicroelectronics

M36W108B120ZN1 from STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at voltages b/w 2.7V and 3.6V, with a max access time of 120 ns. Ideal for commercial applications, it supports surface mount in a very thin profile package.