Micron Technology - NAND08GW3C2BZL1E

NAND08GW3C2BZL1E by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number NAND08GW3C2BZL1E
Description FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; No. of Words Code: 1G; Parallel or Serial: PARALLEL;
Datasheet NAND08GW3C2BZL1E Datasheet
In Stock109
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .00005 Amp
Organization: 1GX8
Sub-Category: Flash Memories
Surface Mount: YES
Maximum Supply Current: 30 mA
Command User Interface: YES
No. of Terminals: 52
No. of Words: 1073741824 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
No. of Sectors/Size: 4K
Terminal Form: NO LEAD
Maximum Operating Temperature: 70 Cel
Package Code: LGA
Memory Density: 8589934592 bit
Sector Size (Words): 256K
Toggle Bit: NO
Memory IC Type: FLASH
Minimum Operating Temperature: 0 Cel
Memory Width: 8
Page Size (words): 2K
Type: MLC NAND TYPE
Qualification: Not Qualified
Package Equivalence Code: LGA52(UNSPEC)
Maximum Access Time: 20 ns
No. of Words Code: 1G
Ready or Busy: YES
Parallel or Serial: PARALLEL
Temperature Grade: COMMERCIAL
Data Polling: NO
Power Supplies (V): 3/3.3
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