PC28F00BP30EFA by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	PC28F00BP30EFA
Description	FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V;
Datasheet	PC28F00BP30EFA Datasheet
In Stock	52

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Programming Voltage (V):	3
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	Flash Memories
Surface Mount:	YES
Technology:	CMOS
No. of Sectors/Size:	2K
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TBGA
Toggle Bit:	NO
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA64,8X8,40
Additional Features:	SYMMETRICAL BLOCKS
Peak Reflow Temperature (C):	260
Terminal Pitch:	1 mm
Maximum Standby Current:	.00048 Amp
Organization:	128MX16
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	31 mA
Command User Interface:	YES
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	64
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE
JESD-30 Code:	R-PBGA-B64
Maximum Operating Temperature:	85 Cel
Width:	8 mm
Memory Density:	2147483648 bit
Sector Size (Words):	64K
Memory IC Type:	FLASH
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Page Size (words):	16
No. of Functions:	1
Type:	NOR TYPE
Common Flash Interface:	YES
Length:	10 mm
Maximum Access Time:	105 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.8
Parallel or Serial:	PARALLEL
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	2 V
Data Polling:	NO
Power Supplies (V):	1.8,1.8/3.3

Pricing (USD)

Qty.	Unit Price	Ext. Price
52	$14.000	$728.000

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.