Micron Technology - PRA256M8V79DG8GQF-15E

  1. Home
  2. Micron Technology - PRA256M8V79DG8GQF-15E
PRA256M8V79DG8GQF-15E by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number PRA256M8V79DG8GQF-15E
Description DDR3 DRAM;
Datasheet PRA256M8V79DG8GQF-15E Datasheet
In Stock2,013
NAME DESCRIPTION
Memory IC Type: DDR3 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,013 - -

Popular Products

Category Top Products

MT48LC16M16A2B4-6AIT:G by Micron Technology

MT48LC16M16A2B4-6AIT:G

Micron Technology

MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
MT48LC4M32B2P-6AAIT:L by Micron Technology

MT48LC4M32B2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AAIT:L is a 3.3V, 4MX32 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and features four bank page burst access mode, making it ideal for high-performance computing applications.
MT41J128M16HA-125IT:D by Silicon360

MT41J128M16HA-125IT:D

Silicon360

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96; Operating Mode: SYNCHRONOUS;
MT53D512M32D2DS-046WT:D by Micron Technology

MT53D512M32D2DS-046WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features single bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.
MT48LC8M16A2P-75IT:G by Micron Technology

MT48LC8M16A2P-75IT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact designs.
MT48LC4M32B2TG-7IT:G by Micron Technology

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
MT41J128M16JT-093G by Micron Technology

MT41J128M16JT-093G

Micron Technology

Micron Technology's MT41J128M16JT-093G is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
W9816G6JH-6I by Winbond Electronics

W9816G6JH-6I

Winbond Electronics

W9816G6JH-6I by Winbond Electronics is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data processing in a compact package.
MT48LC32M16A2TG-75IT:C by Alliance Memory

MT48LC32M16A2TG-75IT:C

Alliance Memory

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT40A512M16LY-075:E by Micron Technology

MT40A512M16LY-075:E

Micron Technology

Micron Technology's MT40A512M16LY-075:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT47H128M16RT-25EAAT:C by Micron Technology

MT47H128M16RT-25EAAT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
K4M281633H-BN75 by Samsung

K4M281633H-BN75

Samsung

Samsung's K4M281633H-BN75 DRAM features 8MX16 organization, 16-bit memory width, and 133 MHz clock frequency. Ideal for applications requiring high-speed data processing with a max operating temperature of 85°C. The package style is grid array with fine pitch, making it suitable for compact electronic devices.
MT40A512M16JY-083E:B by Micron Technology

MT40A512M16JY-083E:B

Micron Technology

Micron Technology's MT40A512M16JY-083E:B is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in devices like servers and high-performance computing systems.
M378T5663RZ3-CF7 by Samsung

M378T5663RZ3-CF7

Samsung

Samsung M378T5663RZ3-CF7 DDR DRAM with 256MX8 organization, 400 MHz clock frequency, and 1.8V supply voltage is ideal for high-speed computing applications. Featuring synchronous operation and self-refresh capability, it offers efficient performance in dual bank page burst access mode.
AS4C4M16SA-6BIN by Alliance Memory

AS4C4M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C4M16SA-6BIN is a 3.3V, 4MX16 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode, operates at -40 to 85°C, and has a memory density of 67108864 bits.
MT48LC16M16A2P-7EAIT:G by Micron Technology

MT48LC16M16A2P-7EAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7EAIT:G is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, four bank page burst access, and offers 268MB memory density. Ideal for industrial applications requiring fast data processing in compact systems.
AS4C512M16D3LB-12BCN by Alliance Memory

AS4C512M16D3LB-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
K4S56163LF-XG75 by Samsung

K4S56163LF-XG75

Samsung

Samsung's K4S56163LF-XG75 is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 133 MHz, suitable for applications requiring high-speed data processing and storage. With a package style of GRID ARRAY, FINE PITCH, it offers fast access time of 5.4 ns and low standby current of 0.0005 Amp.
S70KL1282DPBHI020 by Cypress Semiconductor

S70KL1282DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
MT41J128M16HA-125IT:D by Micron Technology

MT41J128M16HA-125IT:D

Micron Technology

Micron Technology's MT41J128M16HA-125IT:D is a DDR3 DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.