TTS92256GK-35C-3 by Micron Technology | Memory ICs

Image shown is a representation only.

Manufacturer	Micron Technology
Manufacturer's Part Number	TTS92256GK-35C-3
Description	STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: QCCN; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;
Datasheet	TTS92256GK-35C-3 Datasheet
In Stock	1,358

NAME	DESCRIPTION
Package Body Material:	CERAMIC
Maximum Standby Current:	.005 Amp
Organization:	64KX4
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Surface Mount:	YES
Maximum Supply Current:	95 mA
No. of Terminals:	28
No. of Words:	65536 words
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
Technology:	CMOS
JESD-30 Code:	R-XQCC-N28
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	QCCN
Input/Output Type:	COMMON
Memory Density:	262144 bit
Minimum Standby Voltage:	4.5 V
Memory IC Type:	STANDARD SRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	4
Qualification:	Not Qualified
Package Equivalence Code:	LCC28,.35X.55
Maximum Access Time:	30 ns
No. of Words Code:	64K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	5

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,358	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;