1N5470C by Microsemi | Diodes

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Manufacturer	Microsemi
Manufacturer's Part Number	1N5470C
Description	VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	1N5470C Datasheet

NAME	DESCRIPTION
Package Body Material:	GLASS
Variable Capacitance Diode Classification:	ABRUPT
Config:	SINGLE
Diode Type:	VARIABLE CAPACITANCE DIODE
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Minimum Diode Capacitance Ratio:	2.9
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Minimum Quality Factor:	500
JESD-30 Code:	O-LALF-W2
Minimum Breakdown Voltage:	30 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Diode Cap Tolerance:	2 %
JEDEC-95 Code:	DO-7
JESD-609 Code:	e0
Nominal Diode Capacitance:	33 pF
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	.4 W
Additional Features:	HIGH RELIABILITY

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