Microsemi - 3001

  1. Home
  2. Microsemi - 3001
3001 by Microsemi

Image shown is a representation only.

Manufacturer Microsemi
Manufacturer's Part Number 3001
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
Datasheet 3001 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SMMBTH10LT1 by Onsemi

SMMBTH10LT1

Onsemi

SMMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and a transition frequency of 650MHz. It is designed for amplifier applications, featuring a small outline package with gull wing terminals for surface mount assembly in ultra-high-frequency circuits.
2N918 by Texas Instruments

2N918

Texas Instruments

2N918 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and max power dissipation of 0.2W. Ideal for ultra high frequency band applications, such as amplifiers, it has a min DC current gain of 20 and operates up to 200°C.
934059126115 by NXP Semiconductors

934059126115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; No. of Terminals: 4;
BFT92W by Siemens

BFT92W

Siemens

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
BFR93A by Philips Components

BFR93A

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;
MPSH10 by NXP Semiconductors

MPSH10

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .04 A; Transistor Application: SWITCHING;
MT3S111(TE85LF) by Toshiba

MT3S111(TE85LF)

Toshiba

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
2N3866 by Zetex Plc

2N3866

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
MPS3563RLRA by Onsemi

MPS3563RLRA

Onsemi

MPS3563RLRA by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 12V, ideal for amplifier applications in the ultra-high frequency band. It has a min. DC current gain of 20 and operates at up to 150 °C, with a max. power dissipation of 0.625W in a cylindrical package style.
SD5000 by STMicroelectronics

SD5000

STMicroelectronics

SD5000 by STMicroelectronics is an NPN BJT with 4 terminals, operating in the ultra-high frequency band. With a max power dissipation of 7W and max collector current of 1A, it's ideal for RF applications requiring high-frequency performance. The transistor's silicon element material and radial terminal position make it suitable for various RF small signal amplification needs.
MPSH17RLRAG by Onsemi

MPSH17RLRAG

Onsemi

MPSH17RLRAG by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.625W and fT of 800MHz. Ideal for amplifier applications, it operates in the very high-frequency band with a max collector-emitter voltage of 15V.
MMBTH10 by Electronic Devices

MMBTH10

Electronic Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
934055191115 by NXP Semiconductors

934055191115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Collector Current (IC): .025 A; Moisture Sensitivity Level (MSL): 1;
HFA3101BZ by Renesas Electronics

HFA3101BZ

Renesas Electronics

HFA3101BZ by Renesas Electronics is an NPN RF BJT transistor with a max fT of 10GHz. It is used as an amplifier in the ultra-high frequency band, featuring a max operating temp of 150°C and max collector-emitter voltage of 8V. This complex-configured transistor has 6 elements, 8 terminals, and comes in a small outline package with gull wing terminals.
MMPQ2369R1 by Onsemi

MMPQ2369R1

Onsemi

MMPQ2369R1 by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It features a max fT of 550 MHz, VCE of 15V, and IC of 0.5A. The transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.
S822T by Vishay Telefunken

S822T

Vishay Telefunken

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; Transistor Element Material: SILICON;
2N3866A by Microsemi

2N3866A

Microsemi

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;
MMBTH81LT1 by Motorola

MMBTH81LT1

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
SMA540B by STMicroelectronics

SMA540B

STMicroelectronics

SMA540B by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, a nominal transition frequency of 42GHz, and comes in a compact surface mount package. Ideal for L-band signal amplification.
MPS5179RL1 by Onsemi

MPS5179RL1

Onsemi

MPS5179RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 900MHz. It is commonly used in amplifier applications due to its very high-frequency band capabilities. The transistor has a single configuration, cylindrical package style, and through-hole terminal form for easy integration.