Microsemi - JANS2N2222AUA/TR

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JANS2N2222AUA/TR by Microsemi

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Manufacturer Microsemi
Manufacturer's Part Number JANS2N2222AUA/TR
Description Small Signal Bipolar Transistors;
Datasheet JANS2N2222AUA/TR Datasheet
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JANTX2N2222AUA by Micropac Industries

JANTX2N2222AUA

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
2N3904 by Tt Electronics Plc

2N3904

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;
2N2222A by M/a-com Technology Solutions

2N2222A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
BC817-25 by Samsung

BC817-25

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING;
2N2907A by SPC TECHNOLOGY/ MULTICOMP

2N2907A

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;
BC817-40 by Itt Semiconductor

BC817-40

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;
2N2222AUA by M/a-com Technology Solutions

2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Form: NO LEAD;
BC817-40 by General Semiconductor

BC817-40

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC846B by NXP Semiconductors

BC846B

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by Fairchild Semiconductor

MMBT2907A

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222A by Defense Logistics Agency

JANTX2N2222A

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; JESD-30 Code: O-MBCY-W3;
BC817-25W-7 by Diodes Incorporated

BC817-25W-7

Diodes Incorporated

BC817-25W-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 45V, max collector current of 0.5A, and min DC current gain of 100. With a package style of small outline and peak reflow temp of 260°C, it's ideal for compact electronic devices requiring high-speed performance.
2N3904 by Motorola

2N3904

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2905A by Crimson Semiconductor

2N2905A

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC547B by Microchip Technology

BC547B

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
BC817-40 by Diodes Incorporated

BC817-40

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBTA92LT1G by Onsemi

MMBTA92LT1G

Onsemi

MMBTA92LT1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its compact SOT-23 package and high transition frequency. Operates b/w -55°C to 150°C making it suitable for various temperature conditions.
BC817-40 by National Semiconductor

BC817-40

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC817.25 by Central Semiconductor

BC817.25

Central Semiconductor

BC817.25 by Central Semiconductor is a NPN BJT with 160 min hFE and 45V VCEO, ideal for small signal applications. With a max power dissipation of 0.3W and fT of 200MHz, it's suitable for high-frequency circuits in compact designs. This Gull Wing package transistor operates up to 150°C, making it versatile for various electronic devices.
MMBT3906 by Panjit International

MMBT3906

Panjit International

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 300 ns; JESD-609 Code: e3;