Microsemi - JANTXV2N1711S

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JANTXV2N1711S by Microsemi

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Manufacturer Microsemi
Manufacturer's Part Number JANTXV2N1711S
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .5 A; JEDEC-95 Code: TO-39;
Datasheet JANTXV2N1711S Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 3 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 200 Cel
Maximum Power Dissipation Ambient: .8 W
JEDEC-95 Code: TO-39
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
Minimum Operating Temperature: -65 Cel
Qualification: Qualified
Maximum Collector-Emitter Voltage: 30 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: 25 pF
Reference Standard: MIL-19500
Maximum VCEsat: 1.5 V
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