Microsemi - SO-502-CGD-TNN-1090.0000MHZ

SO-502-CGD-TNN-1090.0000MHZ by Microsemi

Image shown is a representation only.

Manufacturer	Microsemi
Manufacturer's Part Number	SO-502-CGD-TNN-1090.0000MHZ
Description	SAW OSCILLATOR; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Physical Dimension: 13.97mm x 8.89mm x 4.49mm; Package Equivalence Code: SMDIP6,.3; Maximum Supply Voltage: 5.25 V;
Datasheet	SO-502-CGD-TNN-1090.0000MHZ Datasheet

SO-502-CGD-TNN-1090.0000MHZ Technical Details

NAME	DESCRIPTION
Minimum Supply Voltage:	4.75 V
Frequency Tolerance:	200 ppm
Nominal Supply Voltage:	5 V
Maximum Supply Voltage:	5.25 V
Output Power:	0 dBm
Maximum Supply Current:	70 mA
Terminal Finish:	Gold (Au) - with Nickel (Ni) barrier
JESD-609 Code:	e4
Oscillator Type:	SAW OSCILLATOR
Minimum Operating Temperature:	-20 Cel
Mounting Feature:	SURFACE MOUNT
No. of Terminals:	6
Package Equivalence Code:	SMDIP6,.3
Nominal Operating Frequency:	1090 MHz
Physical Dimension:	13.97mm x 8.89mm x 4.49mm
Additional Features:	MIL-STD-883
Maximum Operating Temperature:	85 Cel
Maximum Harmonics Level:	-20 dBc

Popular Products

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

MBRS360T3G

Onsemi

MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.

BSS138

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

BAV99

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;