Microsemi - TIP32C

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

PNP; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V; JESD-30 Code: R-PSFM-T2;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;

The Onsemi BD139G is a NPN BJT transistor with max. power dissipation of 12.5W, hFE of 25, and max. collector current of 1.5A. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 80V, operating up to 150°C in a rectangular package style with through-hole terminals.

ULN2804A by Motorola is a power BJT with NPN polarity and 8 banks of Darlington configuration. It has a max VCEsat of 1.6V and can handle a max collector current (IC) of 0.5A. This transistor is commonly used for switching applications due to its built-in diode and resistor.

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;

JAN2N3055 by Microchip Tech is a NPN BJT transistor with max. collector-emitter voltage of 70V, max. collector current of 15A, and min. DC current gain of 20. It's used for switching applications in military standards like MIL-19500/407D, featuring a round package style with flange mount and tin lead terminal finish.

PNP; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Minimum DC Current Gain (hFE): 1000; JESD-609 Code: e0;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; JESD-609 Code: e3;

TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;

D44H11 by Onsemi is a NPN BJT transistor with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

SBCP53-16T1G by Onsemi is a PNP BJT transistor with 80V VCE, 1.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers high performance in compact designs.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;