Mini-circuits - TSS-53LNB3+

  1. Home
  2. Mini-circuits - TSS-53LNB3+
TSS-53LNB3+ by Mini-circuits

Image shown is a representation only.

Manufacturer Mini-circuits
Manufacturer's Part Number TSS-53LNB3+
Description WIDE BAND LOW POWER;
Datasheet TSS-53LNB3+ Datasheet
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
HMC532LP4E by Analog Devices

HMC532LP4E

Analog Devices

Analog Devices' HMC532LP4E is a wide band low power RF amplifier with VSWR of 2. It operates b/w -40°C to 85°C, covering frequencies from 7100 MHz to 7900 MHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
TQP3M9035 by Qorvo

TQP3M9035

Qorvo

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.
MGA-545P8-TR1 by Broadcom

MGA-545P8-TR1

Broadcom

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.
QPA1003P by Qorvo

QPA1003P

Qorvo

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.
ADPA7006AEHZ-R7 by Analog Devices

ADPA7006AEHZ-R7

Analog Devices

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.
MMZ25332BT1 by Freescale Semiconductor

MMZ25332BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;
TQL9062 by Qorvo

TQL9062

Qorvo

The Qorvo TQL9062 is a wide band medium power RF amplifier with 15 dB gain, operating from 500 MHz to 6 GHz. It has a max input power of 33 dBm and VSWR of 1.29, suitable for various RF applications. Constructed with E-PHEMT technology, it features a plastic/epoxy package body and operates b/w -40°C to 105°C.
AMMP-6220-BLK by Broadcom

AMMP-6220-BLK

Broadcom

AMMP-6220-BLK by Broadcom is a wide band low power RF amplifier with a gain of 22 dB. It operates at frequencies ranging from 6 GHz to 20 GHz and has a max input power of 15 dBm. This surface mount component is commonly used in RF and microwave applications.
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
HMC606LC5 by Analog Devices

HMC606LC5

Analog Devices

Analog Devices' HMC606LC5 is a wide band low power RF amplifier with 9.5 dB gain and 15 dBm CW input power. Operating from 2-18 GHz, it has 32 terminals, consumes 95 mA at 5V, and features GaAs technology in a ceramic package. Ideal for RF & microwave applications requiring high performance amplification in a compact form factor.
SGA3563Z by Qorvo

SGA3563Z

Qorvo

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
SGL0363ZSR by Rf Micro Devices

SGL0363ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
ABA-54563-BLKG by Broadcom

ABA-54563-BLKG

Broadcom

Broadcom's ABA-54563-BLKG is a wide band low power RF amplifier with 21 dB gain, operating from 0 to 3400 MHz. It has a max input power of 20 dBm and VSWR of 1.2, suitable for surface mount applications in RF & microwave systems. The component features a characteristic impedance of 50 ohms and operates at 5V with a max supply current of 90 mA.
SMA3107-TL-E by Sanyo Semiconductor

SMA3107-TL-E

Sanyo Semiconductor

WIDE BAND LOW POWER;
HMC505LP4E by Analog Devices

HMC505LP4E

Analog Devices

Analog Devices' HMC505LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 6800-7400 MHz, and VSWR of 2. Ideal for narrowband low-power applications in temperatures from -40 to 85°C. Package: PLASTIC/EPOXY, Technology: BIPOLAR, Mounting: SURFACE MOUNT.
SKY65624-682LF by Skyworks Solutions

SKY65624-682LF

Skyworks Solutions

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.
MW7IC2750NBR1 by Freescale Semiconductor

MW7IC2750NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;
SP9711 by Amplifonix

SP9711

Amplifonix

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;
MAX2373ETC+T by Analog Devices

MAX2373ETC+T

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn) - annealed;