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Manufacturer | Mitsubishi Electric |
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Manufacturer's Part Number | MGF4964BL |
Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Power Gain (Gp): 11.5 dB; |
Datasheet | MGF4964BL Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 11.5 dB |
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .06 A |
Sub-Category: | FET RF Small Signal |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Terminal Position: | QUAD |
Package Style (Meter): | MICROWAVE |
JESD-30 Code: | S-PQMW-F4 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | K BAND |
Maximum Operating Temperature: | 125 Cel |
Maximum Drain Current (Abs) (ID): | .06 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Power Dissipation Ambient: | .05 W |